La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickn...

When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical constraints for the smallest achievable film thickness. This work presents a detailed study on the int...

The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better ...

In this paper, we report the effects of a N2 postmetallization annealing PMA on the reliability and charge-trapping characteristics of tungsten/La2O3/silicon structures. The samples are stressed with a constant-voltage stressing CVS with substrate injection. After the stressing we found that the flatband voltage VFB of the samples positively shifts, indicating a net negative charge trapped in t...

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown ...

In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier laye...

Refractory Y-α-SiAlON with elongated grain morphology was obtained by utilizing La2O3 as a densification aid, which resulted in excellent room-temperature and high-temperature strength. Room-temperature strength of 1000 MPa was achieved when La2O3 was augmented by adding Y2O3 or removing AlN. With only La2O3, a temperature-independent strength of 800–950 MPa was maintained up to 1100°C, then gr...