The authors present a low-power 850 nm Si optoelectronic integrated circuit (OEIC) receiver fabricated in standard 65 nm complementary metal–oxide semiconductor (CMOS) technology. They analyse power consumption of previously reported CMOS OEIC receivers and determine the authors receiver architecture for low-power operation. Their OEIC receiver consists of a CMOS-compatible avalanche photodetec...

An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom...

A low-cost, compact 5-Gbps fully integrated CMOS optical receiver without equalizer is fabricated in this paper in a standard 0.18-μm CMOS technology. The measured responsivity of the DNW-strip-SMPD operating in avalanche mode is 1.4A/W, while the bandwidth is 2.9GHz with 11.6V reverse bias voltage. The application for 5-Gbps very-short-reach optoelectronic integrated circuit (OEIC) receiver wi...

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable e...

Building off the success of federal earned income tax credit (EITC), states have developed credits to supplement incomes working poor. In 2016, a distinctive change Oregon Earned Income Credit (OEIC) targeted additional resources families with young children. Using unique data set and static estimates, we found that OEIC yielded proportional decreases in child poverty 1.8 2.6%, respectively. By...