AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

A low phase noise, low dissipated power and small sized Ka-band voltage-controlled oscillator (VCO), using dual cross-coupled pair configuration and capacitance-splitting technique is presented. The Ka-band VCO circuit uses 0.15 μm GaAs pHEMT technology. The VCO has low phase noise, of 116.36 dBc/Hz, at a 1 MHz offset and can be tuned from 30.5 to 31.22 GHz. The figure of merit (FOM) is -192.36...

A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry it based pHEMT varactors order to achieve a very small chip size. 0dBm-output power over the entire tuning range 27.67 GHz 28.91 GHz, phase noise of -96.274 dBc/Hz -116.24 at 1 10 MHz offset f...

Based on a conventional flash architecture a 4-bit GaAs analog to digital (A/D) converter has been designed using OMMIC-Philips GaAs foundry and particularly its commercial enhancement/depletion mode 0.18 μm pHEMT technology process. The ADC operates at 7.5 GHz sampling rate with full power analog input bandwidth from DC to Nyquist frequency. Differential source coupled FET logic (SCFL) was use...

An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter desc...

Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...

This work presents a process design kit (PDK) for 0.15 μm GaAs pHEMT low-noise MMIC applications developed AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, transistors. The PDK can be used in technology transfer or education.

The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided δ-doping at 6×1012 cm-2 and an AlAs/GaAs spacer. Such were used fabricate monolithic integrated circuits single-pole double throw switches with gate length width 0.5 μm 100 μm, respectively. resulting had following parameters: gm = 400 mS/mm, saturation current ID=380 ...

Driven by the wireless handset market the GaAs industry has seen an immense growth in recent years. The wireless markets will continue to grow. In addition an emerging mmW market with applications in automotive, defense and optoelectronics will further drive the demand for GaAs components. The two biggest European GaAs foundries, Filtronic and UMS, are very well positioned to address globally t...

Approach: Wafers and Products The BiHEMT process architecture is a hybrid GaAs/InGaP HBT process co-integrated with an optically-defined 0.7 um gate, InGaP etch-stop, pseudomorphic high electron mobility (pHEMT) process. Both enhancement-mode and depletionmode pHEMT transistors are available. This process offers both power amplifier and RF switch capability, as well as low-noise performance to ...