In order to reduce on state resistance of LDMOS transistor, it is necessary to use RESURF structure. However, conventional isolated RESURF structures cannot be used in a multi power BCD process because of the breakdown voltage dependence on epi thickness. Accordingly, we had to use non RESURF LDMOS transistor that has higher on state resistance than RESURF LDMOS transistor in a multi power BCD ...

Abstract A novel stepped L-shaped trench gate silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with N-pillar (SLTGN-LDMOS) is proposed. SLTGN-LDMOS contains a highly doped N-pillar, assisting in reducing the specific on-resistance (Ron,sp). The (SLTG) attracts electrons to attach edge of trench, thus directing more current flow along e...

Abstract. Recently, a lateral double diffused metal-oxide-semiconductor (LDMOS) using In0.53Ga0.47As having an extended–p + (ep+) body has been shown to be better than a conventional silicon based LDMOS. In this paper, we show that using a stepped gate (SG) for the InGaAs LDMOS, a significantly improved performance can be achieved than using an extended–p+ body for the InGaAs LDMOS. The propose...

In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this k...

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and...

A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear wit...

This paper presents a compact model of lateral double diffused MOS (LDMOS) transistor having small size and got good result with different characteristics. This model is designed with ATLAS SILVACO and get better simulations of breakdown voltage, on resistance etc. comparing with reference LDMOS. We have designed this device with channel 0.3 μm length and gate 0.75 μm length.