We report intrinsic current-voltage properties of ZnO nanowire measured by a four-tip scanning tunneling microscopy F-STM . It is found that after bending the nanowire with the F-STM the conductance is reduced by about five orders of magnitude. The cathodoluminescent spectra indicate that the ZnO nanowires contain a sizable amount of defects in the surface region, responsible for their conducti...

Related Articles Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile Appl. Phys. Lett. 99, 262102 (2011) Doping profile of InP nanowires directly imaged by photoemission electron microscopy Appl. Phys. Lett. 99, 233113 (2011) Hafnium-doped GaN with n-type electrical resistivity in the 104cm range Appl. Phys. Lett. 99, 202113 (2011)...

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamina...

Bottom-up synthesis of zinc oxide (ZnO) nanowires requires a highly engineered substrate to achieve alignment and orientation control. Here, we report textured ZnO film as an inexpensive substrate to fulfill the requirement. The textured film is coated conformally on various surface topographies and allows the epitaxial growth of ZnO nanowires with vertical, tilted, or lateral orientations. The...

The electrical transport through nanoscale contacts of ZnO nanowires bridging the interdigitated Au electrodes shows the negative differential resistance (NDR) effect. The NDR peaks strongly depend on the starting sweep voltage. The origin of NDR through nanoscale contacts between ZnO nanowires and metal electrodes is the electron charging and discharging of the parasitic capacitor due to the w...

Self-organized dendritic crystal growth is explored to assemble uniform semiconductor nanowires into highly ordered one-dimensional microscale arrays that resemble comb structures. The individual ZnO nanowires have uniform diameters ranging from 10 to 300 nm. They are evenly spaced on a stem with a regular periodicity of 0.1-2 micrometer. Under optical excitation, each individual ZnO nanowire s...

Plenty of researches have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since to analyze the optical confinement and their correlation lengths along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid ...

The fabrication and application of an intracellular K + -selective microelectrode is demonstrated. ZnO nanowires with a diameter of 100–180 nm and a length of approximately 1.5 μm are grown on a borosilicate glass microcapillary. The ZnO nanowires were coated by a K + -ionophore-containing membrane. The K + -selective microelectrode exhibited a K + -dependent potentiometric response versus an A...

This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...

We review two strategies for growing ZnO nanowires from zinc salts in aqueous and organic solvents. Wire arrays with diameters in the nanoscale regime can be grown in an aqueous solution of zinc nitrate and hexamethylenetetramine. With the addition of poly(ethylenimine), the lengths of the wires have been increased to 25 mum with aspect ratios over 125. Additionally, these arrays were made vert...