The O-doped ZnTe (ZnTe! xOx) alloys present induce levels through O doping into the host semiconductor gap. ZnTe usually crystallizes in the zinc-blend structure and ZnO in the wurtzite structure under normal conditions. Therefore two possible ZnTe5 xOx phases may coexist, although in different proportions, depending on experimental growth conditions. We present total energy calculations and an...

In this study, a penetration-controlled friction stir welding (FSW) technique was employed to lap weld dissimilar Al/Mg alloys, incorporating Zn interlayer. The joint’s microstructure, interfacial reaction, and phase composition were analyzed through optical microscopy, scanning electron X-ray diffraction. findings demonstrate the formation of hybrid joint comprising FSWed region diffusion bond...

The wide band-gap group-III nitride semiconductors AlN, GaN, InN, and their ternary AlGaN, InAlN, InGaN alloys have been extensively investigated due to their importance for the electronic and optoelectronic device technology. Recent examples are the optoelectronic commercial devices operating in the green-blue and ultraviolet (UV) spectral regions. By allowing among the group-III nitrides one ...