The results on measuring the I--V characteristics of metal-semiconductor transition within Ti (200 nm)|Si@O@Al (180 nm)|Ti (203 nm) test structure are presented. basis Si@O@Al nanocomposite is a solid solution Al in amorphous silicon a-Si(Al). has form characteristic reverse-biased ohmic contact between metal and p-type semiconductor, which implies that a-Si(Al) substitutional solution. It show...

This article focuses on a protection system from lightning indirect effects applicable to power converters for avionic applications. The case study considered in this is dc-dc pulsewidth modulation buck-boost converter protected by metal oxide varistor and series inductive blocking element. investigated when operated normal operating conditions, under strokes without protection, with protection...