The InAlAs/InGaAs metamorphic HEMT (mHEMT) two-stage Ka-band amplifier and DC-30 GHz distributed SPST switch were designed and fabricated using low-k benzocyclobutene (BCB) bridged technology. This fabrication technology takes the advantages of its low dielectric permittivity (2.7), low loss tangent (0.008), low curing temperature, low water up-take, and simple manufacturing process. The MMIC f...

This report presents the analysis of lumped, lossless networks configured to emulate ideal transmission line characteristics over broad frequency passbands. The filter sections are configured to allow for the realization of distributed amplifiers capable of processing signal frequencies extending through tens of gigahertz. The principle advantage of the distributed approach to broadband amplifi...

a novel low noise trans-impedance amplifier is proposed using low cost 0.18 µm cmos technology. a resistive-capacitive feedback is used to extend the bandwidth of the amplifier. as the structure is inductor less, it is suitable for low cost integrated optical interconnects. in this paper improved particle swarm optimization have applied to determine optimal trans-resistance and noise of propose...

a digital look-up table adaptive predistortion technique using a six-port receiver for power amplifier linearization is presented. the system is designed in ka-band for a dvb-s2 satellite link. we use a six-port receiver at the linearizationloop in place of classic heterodyne receivers. the six-port receiver is implemented by the use of passive microwavecircuits and detector diodes. this approa...