نتایج جستجو برای: tunneling effect
تعداد نتایج: 1660038 فیلتر نتایج به سال:
A new ”twice loose shoe” method in the Wheeler-DeWitt equation of the universe wave function on the cosmic scale factor a and a scalar field φ is suggested in this letter. We analysis the both affects come from the tunneling effect of a and the potential well effect of φ, and obtain the initial values a0 and φ0 about a primary closed universe which is born with the largest probability in the qu...
In this paper we describe the tunneling junction model effect on silicon nanowire gate-allaround field effect transistor using CMOS 45 nm technology. Tunneling effects provides better subthreshold slope, excellent drain induced barrier lowering and superior ION-IOFF ratio.This paper demonstrates the gate controlled tunneling at source of Gate-all-around field effect transistor. Low leakage curr...
We present a low-temperature ~mK! magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled ...
We investigate Andreev reflection (AR) resonant tunneling through a precessing spin which is coupled to a normal metallic lead and a superconducting lead. The formula of the AR conductance at zero temperature is obtained as a function of chemical potential and azimuthal angle of the spin precessing by using the nonequilibrium Green function method. It is found that as the local spin precesses i...
In an earlier paper, it is proposed that, due to resonance tunneling effect, tunneling from a large cosmological constant Λ site in the stringy comic landscape can be fast, while tunneling from a small Λ site may take exponentially long time. Borrowing the renormalization group analysis of the conductance in the Anderson localization transition, we treat the landscape as a multi-dimensional ran...
We have analyzed the effect of electron-LO phonon interaction in a doublebarrier resonant tunneling structure under a magnetic field B applied parallel to the tunneling current. While the low temperature anti-crossing phenomenon has already been investigated, here we study the phonon absorption resonant magnetotunneling at finite temperatures. The Matsubara technique is used to sum up resonant ...
Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower energy than their conventional counterparts. The recent emergence of two-dimensional (2D) semiconducting crystals provides an attractive material platform for...
Metallic nanoparticle assisted band-to-band tunneling is proposed, and the impact of such nanoparticle induced states on the tunneling probability and current is modeled and analyzed. An analytical formula for tunneling probability is derived for the case of constant force, and it is shown that the incorporation of these particles in the forbidden gap can lead to a substantial increase in the t...
We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I – V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental resul...
In this paper, we present the results of single-electron tunneling in two-dimensional (2D) hexagonal closed packed arrays of palladium nanoparticles. After inspecting the emergence of Coulomb blockade phenomena, we demonstrate the possibilities of using these arrays as a single-electron tunneling based hydrogen sensor. We assumed arrays of palladium nanoparticles with diameters of 3.5 and 6...
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