نتایج جستجو برای: tunnel diode amplifier
تعداد نتایج: 76561 فیلتر نتایج به سال:
A new approach for efficient second-harmonic generation using diode lasers is presented. The experimental setup is based on a tapered amplifier operated in a ring resonator that is coupled to a miniaturized enhancement ring resonator containing a periodically poled lithium niobate crystal. Frequency locking of the diode laser emission to the resonance frequency of the enhancement cavity is real...
A continuous single-frequency tunable blue laser at 447.3 nm is developed by external-cavity frequency doubling of a tapered amplifier-boosted continuous-wave diode laser at cesium (Cs) D1 line. A maximum blue power of 178 mW with 50.8% conversion efficiency is obtained. It can be continuously tuned over a range around 1.6 GHz as the diode laser frequency is scanned across the F=4→F'...
Page Abstract ............................................................................................................2 Introduction ......................................................................................................2 Key MOSFET Electrical Parameters in Class D Audio Amplifiers ....................2 Drain Source Breakdown Voltage BVDSS........................................
A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5-THz Schottky diode mixer. The mixer blends conventional machined metallic waveguide with micromachined monolithic GaAs circuitry to form, for the first time, a robust, easily fabricated, and assembled room-temperature planar diode receiver at frequencies above 2 THz. Measurements of receiver per...
We describe a Nd:YAG slab laser master oscillator power amplifier (MOPA) system that has been scaled to 104 W of output power at 1064 nm, single transverse mode. The amplifier system consists of rod amplifiers followed by edgeand end-pumped slab amplifiers. The MOPA output of 104 W was 89% fundamental TEM00 spatial mode with less than 3% depolarization. These results are a key milestone in the ...
We have demonstrated high-peak-power generation at 1 kW average power by applying an acousto-optic Q switch to a quasi-cw diode-pumped Nd:YAG master oscillator power amplifier. We achieved a maximum peak power of 2.3 MW by driving the Q switch in burst mode. The average repetition rate was 6 kHz. The corresponding beam quality was M2 = 9.
The multimode and depolarized output beam of a highly multimode diode-pumped Yb-doped fiber amplifier is converted to a diffraction-limited, linearly polarized beam by a self-referencing two-wave-mixing process in an infrared-sensitive photorefractive crystal (Rh:BaTiO3). As much as 11.6 W of single-mode output is achieved with a 78% multimode-to-single-mode photorefractive conversion efficiency.
A microfluidic ion exchange membrane hybrid chip is fabricated using polymer-based, lithography-free methods to achieve ionic diode, transistor and amplifier functionalities with the same four-terminal design. The high ionic flux (>100 μA) feature of the chip can enable a scalable integrated ionic circuit platform for micro-total-analytical systems.
We present measurements of superconducting tunnel junction (STJ) spectrometers optimized for extreme ultraviolet energies (EUV), between 20–200 eV. The high count rates demands of astronomical applications, such as solar flare studies, uniquely suit STJs as compared to other cryogenic spectrometers. We have simulated EUV measurements with the technique of multiphoton absorption using a pulsed U...
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