purpose : to compare postoperative anatomical sclerotomy sites of transconjunctival sutureless vitrectomy (tsv) with conventional 20-gauge vitrectomy methods : in this prospective, nonrandomized study 30 consecutive patients divided in 2 groups: group i, 15 eyes from 15 patients underwent conventional 20-gauge and group ii, 15 eyes from 15 patients underwent tsv (23, 25-gauge) pars plana vitrec...

Cu-filled TSV (through silicon via) is important technology for 3-D LSIs in order to obtain higher packing density, faster signal transmission, and lower power consumption. Diameter of TSV is expected to be smaller than 2 μm, and its aspect ratio to be larger than 10 in near future [1]. For realizing a high aspect ratio Cu-filled TSV, it is essentially important to form the barrier and seed lay...

AIM To evaluate corneal topographic changes and surgically induced astigmatism (SIA) after combined phacoemulsification and 25-gauge transconjunctival sutureless vitrectomy (25-G TSV). METHODS A retrospective study on 96 eyes of 87 patients who underwent combined phacoemulsification and 25-G TSV. The different topographic parameters and SIA were analyzed pre- and postoperatively. RESULTS Th...

Defects in TSV will lead to variations in the propagation delay of the net connected to the faulty TSV. A non-invasive Vernier Ring based method for TSV pre-bond testing is proposed to detect resistive open and leakage faults. TSVs are used as capacitive loads of their driving gates, then time interval compared with the fault-free TSVs will be detected. The time interval can be detected with pi...

Three dimensional integrated circuits (3D ICs) built with through-silicon vias (TSVs) have smaller footprint area, shorter wirelength, and better performance than 2D ICs. However, the quality of 3D ICs is strongly dependent on TSV dimensions and parasitics. Using large TSVs may cause silicon area overhead and reduce the amount of wirelength reduction in 3D ICs. In addition, non-negligible TSV p...

Tristimulus values (TSV) form the basis of colorimetry. They are transformed to other colorimetric coordinates for industrial applications such as colour specification, colour quality control, colour difference evaluations, device characterization for cross-media colour reproduction and recipe formulation. Accurate calculation of TSVs is highly desired by industry for open environment communica...

With the leakage-thermal dependency, the increasing on-chip temperature in 3D designs has serious impact on IR drop due to the increased wire resistance and increased leakage current. Therefore, it is necessary to consider Power/Ground network design with thermal effects in 3D designs. Though Power/ Ground (P/G) TSV can help to relieve the IR drop violation by vertically connecting on-chip P/G ...

Through-silicon via (TSV) technology enables 3D-integrated devices with higher performance and lower cost as compared to 2D-integrated systems. This is mainly due to smaller dimensions of the package and shorter internal signal lengths with lower capacitive, resistive and inductive parasitics. This paper presents a novel low-cost fabrication technique for metal-filled TSVs with very high aspect...

This paper gives a comprehensive study on the modeling and design challenges of Through Silicon Vias (TSVs) in high speed three-dimensional (3D) system integration. To investigate the propagation characteristics incurred by operations within the ultra-broad band frequency range, we propose an equivalent circuit model which accounts for rough sidewall effect and high frequency effect. A closed-f...

This work demonstrates the dynamic through-silicon-via (TSV) filling process through staged electrodeposition experiments at different current densities. Different morphologies corresponding to TSV filling results can be obtained by controlling the applied current density. Specifically, a low current density (4 mA/cm2) induces seam defect filling, a medium current density (7 mA/cm2) induces def...