A novel method for the reduction of subthreshold slope below the room-temperature Boltzmann limit of 60 mV/dec for a field-effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This i...

Multiple supply voltages, multiple transistor thresholds and transistor sizing could be used to reduce the power dissipation of digital blocks. This paper presents a framework for evaluating the effectiveness of each of these approaches independently and in conjunction with each other. Results show the advantages of multiple supply, transistor sizing, and multiple threshold can be compounded to...

A simple method for transistor DC parameter extraction is presented, where the self-heating of the transistor is taken into account. The thermal behaviour of the transistor is modelled using a single thermal resistance, whose value is extracted simultaneously with the electrical parameters. When pulsed measurements are performed the usage of the thermal resistance, as an effective thermal resis...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

An original scheme for constructing an ultra-wideband single-transistor generator of noise-like oscillations the microwave range wavelengths was proposed. The contains inertial converter output signal a nonlinear amplifier with positive feedback, which modulates supply voltage active element (transistor). experimental model chaotic based on powerful domestic transistor 2T982A-2 operating in sma...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

A new type of nonlinear analog transistor networks has recently been proposed for “turbo” decoding of error correcting codes. However, the influence of various nonidealities on the performance of such analog decoders is not yet well understood. The paper addresses the performance degradation due to transistor mismatch. Some analytical results are derived that allow to compare the accuracy of an...

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on ...

A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky Collector Bipolar Transistor (SCBT) in Silicon-On-Insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current...

This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electros...