Epitaxial GaN films were grown by metal organic chemical vapor deposition (MOCVD) on functionalized epitaxial graphene (EG) using a thin ( 11 nm) conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cm 1 after GaN growth. X-ray diffraction analysis reveals [0001]-oriented hexagonal GaN with (0002) peak rocking curve full width at the half maximum (FWHM) of 544 arcs...

The influence of a thin porous SiNX interlayer on the growth of GaN by metalorganic chemical vapor deposition (MOCVD) has been studied. The interlayer is deposited on a GaN template by introducing silane in the presence of ammonia into the MOCVD chamber, and a GaN overlayer is deposited on the interlayer. The SiNX interlayer produces inhomogeneous nucleation and lateral growth of the overlayer,...

Two different feature scale modeling frameworks are utilized for the study of aluminum (Al) deposition profiles inside micro-trenches. The first framework, which is applied in metal-organic chemical vapor deposition (MOCVD) of Al, couples a ballistic model for the local flux calculation, a surface chemistry model, and a profile evolution algorithm. The calculated conformity of the deposited fil...

Recently, film materials based on the combination of noble metals have showed promising results for surface modification medical implants, allowing both to improve biocompatibility and acquire increased antibacterial effect. An important challenge here is combine developed coating morphology, which favorable biological response, with a high protective function, which, contrary, requires compact...

We report on-chip InGaAs nanopillar lasers directly grown on silicon using a lowtemperature, CMOS-compatible MOCVD process. A novel whispering gallery and Fabry-Perot hybrid cavity mode provides optical feedback for laser oscillation in as-grown subwavelength nanopillars. ©2010 Optical Society of America OCIS codes: (140.5960) Semiconductor lasers; (230.3120) Integrated optics devices; (130.313...

GaN layers were grown on Si (111) by MOCVD using epitaxial single crystal rare-earth oxide buffer which helps to solve mechanical strain related problems arising due to lattice and thermal expansion mismatch between the III-N layer and the substrate. Chemical stability of the rare-earth oxide in contact with silicon as well with GaN is analyzed. Transformation of rare-earth oxide to rare earth ...

CoSi particles on a silica support, synthesized by metal organic chemical vapor deposition (MOCVD) of Co(SiCl(3))(CO)(4) as a precursor at atmospheric pressure and moderate temperature in a fluidized bed reactor, show high catalytic activity and selectivity in naphthalene hydrogenation.

Al 2 TiO 5 -based coatings made from aluminium- and titanium-isopropoxide co-deposition using MOCVD, offering reduced temperatures timescales for its synthesis without binary phase formation.

Abstract We carefully investigate three important effects including postgrowth activation annealing, delta ( δ ) dose and magnesium (Mg) buildup delay as well experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in single growth step. By ...