نتایج جستجو برای: thermal bonding

تعداد نتایج: 258729  

2014
Chung-Feng Jeffrey Kuo Jiong-Bo Chen Chung-Yang Shih Chao-Yang Huang

Silicone pressure-sensitive adhesives compositions contain a polydimethylsiloxane and a silicone resin, which can enhance the instant bonding ability and bonding strength of the adhesive. In this study, silicone resin was designed to have a low molecular weight and a highly nonpolar chemical structure. The silicone resin was applied to silicone pressure-sensitive adhesives. The molecular struct...

2008
Baldev Raj Indira Gandhi

Hard facing alloys like Colmonoy are overlaid on nuclear components to provide corrosion, wear and galling resistance under high temperature service conditions. Typical reactor components on which overlays are provided include grid plate, diverse safety rod drive mechanism etc. The thickness of the overlay ranges from 0.5-3 mm. Typical defects likely during deposition include lack of bonding be...

2009
S. Kamnis S. Gu C. Chen

During high velocity oxy-fuel (HVOF) thermal spraying, most powder particles remain in solid state prior to the formation of coating. A finite element (FE) model is developed to study the impact of thermally sprayed solid particles on substrates and to establish the critical particle impact parameters needed for adequate bonding. The particles are given the properties of widely usedWC-Co powder...

2015
Momchil T. Mihnev John R. Tolsma Charles J. Divin Dong Sun Reza Asgari Marco Polini Claire Berger Walt A. de Heer Allan H. MacDonald Theodore B. Norris

In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interl...

2005
Hiroaki Muta Akihiro Ieda Ken Kurosaki Shinsuke Yamanaka

The thermoelectric properties of lanthanum-doped polycrystalline perovskite-type europium titanate were measured from room temperature to 900K and compared to those of MTiO3 (M 1⁄4 Ca, Sr, Ba). The differences in the titanates were calculated in terms of the differences of A-site ion and Ti–O distance that determined the covalent bonding strength. The A-site ion appeared to have little influenc...

2015
S. Natarajan P. K. Chawdhry Sai Nath

Powder metallurgy has been used for the manufacture of fully dense, which have not reacted composites consisting of a matrix of copper containing 50 -60 vol% particles with negative thermal ZrW2O8 expansion. On cycling between 25 and 300°C, the compounds showed coefficients thermal expansion which varies rapidly with temperature and significantly larger than expected by theory. Improvements in ...

2001
G. DE S. HARKEMA D. FEIL

The crystal structure and electronic charge distribution of pyrazine (1,4-diazabenzene) has been determined at 184 K by X-ray methods. The structural results of Wheatley [Acta Cryst. (1957), 10, 182-187] have been confirmed. A clear indication of bonding effects is obtained. Neither positional and thermal parameters nor difference-Fourier maps are affected by extinction. The effect of thermal d...

2014
Rajneesh Kumar S C Rajvanshi Mandeep Kaur

The present investigation is concerned with the propagation of waves at an imperfect boundary of heat conducting elastic solid and micropolar fluid media. The amplitude ratios of various reflected and transmitted waves are obtained in a closed form due to incidence of longitudinal wave (P-wave), thermal wave (T-wave), and transverse wave (SV-wave). The variation of various amplitude ratios with...

2003
J. R. Waldrop K. C. Wang J. J. Corcoran K. Wang R. B. Nubling

Thermal considerations hecome important for optimal operation of high power heterojunction bipolar transistors (HBTs) in applications such as the next generation of phased-array radar systems. In particular, devices grown on GaAs substrates suffer due to the mediocre thermal conductivity of the III-V compound semiconductors. The maximum achievable power density before device performance degrade...

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