We have measured impact ionization coefficients, a and p, in 150 A pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. a and 0 in lattice-matched GaAs layers are found to be lower than those in strained Ino.zGacsAs and higher than those in strained Ina15Gac,,A10~,,As. fl is larger than a in all the samples. The results ...

Ring-opening metathesis polymerization is a robust method to synthesize variety of polymers by using ring-strained molecules as monomers, e.g., norbornenes. However, the synthesis monomers with multiple functional groups remains challenge, albeit peptide norbornenes have previously been used. Here, Passerini three component reaction exploited two variable varying in bulkiness and distance from ...

We show by simulation that electron mobility and velocity overshoot are greater when strained inversion layers are grown on SiGe-On-insulator substrates ~strained Si/SiGe-OI! than when unstrained silicon-on-insulator ~SOI! devices are employed. In addition, mobility in these strained inversion layers is only slightly degraded compared with strained bulk Si/SiGe inversion layers, due to the phon...

For the past five years, strained GaAs photocathodes have been used for the SLAC polarized electron source producing electron beams having a spin polarization of 78% (85%) for high (low) current operation. Photocathode research has been continuously conducted to understand the cathode characteristics and to improve performances. This paper describes the recent developments in the strained photo...

We present the utilization of δ-doping to mitigate the rise in nonlinear gain compression in highly-strained InGaAs VCSELs and compare it with unstrained and undoped active region designs. High speed 25 Gbps operation is also demonstrated. KeywordsVCSELs, optical interconnect, highly-strained, δdoping

In this work, for the first time, the valence band offset, ∆EV, between strained Si and strained Si1-yGey on relaxed Si1-xGex, has been measured using a combination of experimentation and modeling. Such structures have been shown to offer large mobility enhancements for both electrons and holes, and knowledge of the band parameters is critical in order to optimize and predict device behavior [1...

The band structure of strained Si ~4–10 ML! on ~001! GaAs, band lineups of the strained Si/~001!GaAs heterojunction, and confined energy levels of the Si3N4 /Si/GaAs quantum well have been calculated via a pseudopotential method. It has been found that in this technically important Si3N4 /Si/~001!GaAs structure, strained Si has a very narrow band gap ~0.34 eV! at the D' point in the Brillouin z...

The tunneling field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling does not sample the Maxwell-Boltzmann distribution of carriers that gives rise to the 60 mV/decade li...