نتایج جستجو برای: static random access memory

تعداد نتایج: 919182  

2006
Gürhan Küçük Can Basaran

Wireless sensor networks (WSNs) gained increasing interests in recent years; since, they allow wide range of applications from environmental monitoring, to military and medical applications. As most of the sensor nodes (a.k.a. motes) are battery operated, they have limited lifetime, and user intervention is not feasible for most of the WSN applications. This study proposes a technique to reduce...

2003
Chih-Wea Wang Kuo-Liang Cheng Chih-Tsun Huang Cheng-Wen Wu

Conventionally, the test of multiport memories is considered difficult because of the complex behavior of the faulty memories and the large number of inter-port faults. This paper presents an efficient approach for testing and diagnosing multiport RAMs. Our approach takes advantage of the higher access bandwidth due to the increased number of read/write ports, which also provides higher observa...

1998
Jason Cong Yean-Yow Hwang John Peck Chang Wu Songjie Xu Yuzheng Ding

Journal: :IEICE Transactions 2007
Fayez Robert Saliba Hiroshi Kawaguchi Takayasu Sakurai

We report an SRAM with a 90% reduction of activeleakage power achieved by controlling the supply voltage. In our design, the supply voltage of a selected row in the SRAM goes up to 1 V, while that in other memory cells that are not selected is kept at 0.3 V. This suppresses active leakage because of the drain-induced barrier lowering (DIBL) effect. To avoid unexpected flips in the memory cells,...

2006
Luigi Dilillo Bashir M. Al-Hashimi Paul Rosinger Patrick Girard

In this paper we study the impact of leakage currents on the operation of SRAM memories fabricated using nanoscale technologies. We show how the leakage currents, flowing through the pass transistors of unselected cells, may affect the read operation causing Leakage Read Faults (LRFs). The results of extensive Spice simulation on a 65nm SRAM are analyzed to evaluate the occurrence of the LRF fo...

1999
Von-Kyoung Kim Tom Chen

This paper describes the defect coverage evaluation of memory testing algorithms. Realistic CMOS defects were extracted from a 2 2 SRAM layout using an IFA tool, and circuit simulations were performed to measure the defect coverages of the eleven memory testing algo-

2017
Luigi Dilillo Paul Rosinger Patrick Girard Bashir Al-Hashimi Bashir M. Al-Hashimi

In this paper we analyze the test power of SRAM memories and demonstrate that the full functional precharge activity is not necessary during test mode because of the predictable addressing sequence. We exploit this observation in order to minimize power dissipation during test by eliminating the unnecessary power consumption associated with the pre-charge activity. This is achieved through a mo...

2006
Douglas Lanman

For this problem we assume that the set of training examples {(xi, yi)} are drawn from two classes such that yi = ±1. For such two-class classifcation problems, the form of yihm(xi) is particularly simple; if an example is correctly classified, then yihm(xi) = 1. If an example is misclassified, then yihm(xi) = −1. As a result, Equation 3 can be decomposed as Zm = W (m−1) + e −αm + W (m−1) − e α...

2001
Michael Meißner Michael C. Doggett Johannes Hirche Urs Kanus Wolfgang Straßer

One of the most severe problems for ray casting architectures is the waste of computation cycles and I/O bandwidth, due to redundant sampling of empty space. While several techniques exist for software implementations to skip these empty regions, few are suitable for hardware implementation. The few which have been presented either require a tremendous amount of logic or are not feasible for hi...

1987
Walter Daelemans

A tool is described which helps in the creation, extension and updating of lexical knowledge bases (LKBs). Two levels of representation are distinguished: a static storage level and a dynamic knowledge level. The latter is an object-oriented environment containing linguistic and lexicographic knowledge. At the knowledge level, constructors and filters can be defined. Constructors are objects wh...

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