A monolithic pixel sensor in deep-submicron SiliconOn-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 μm pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. The p...

This paper reviews the basic circuit issues of silicon-on-insulator (SOI) technology for metal-oxide-semiconductor (CMOS) circuits. The superior features of SOI in low power, high speed, high device density and the effect of floating body particularly in partial depletion (PD) SOI device are addressed. Analog and RF circuits are considered and their performances are compared with those reported...

OVERVIEW: There is an increased demand for the production of nextgeneration super-high-speed and low-power-consumption CMOS (complementary metal-oxide semiconductor) devices using SOI (silicon on insulator). Major global device manufacturers are actively commercializing this product. In SOI technology, a device is fabricated in a silicon layer (SOI layer) formed on a BOX (buried oxide) film. Al...

Demonstrations of sub 20nm gate length MOSFET devices involving various FEOL (front end of line) schemes such as Silicon On DEpletion Layer (SODEL) FET’s, asymmetricgate FinFET devices, planar Ultra-thin body SOI (UTSOI) FET’s, and, more recently, independently oriented surface channels for (110) pMOS and (100) nMOS described as Simplified Hybrid Orientation Technology (SHOT).[1-4, 718] have be...

Woodchuck hepatitis virus (WHV) is molecularly and pathogenically closely related to hepatitis B virus (HBV). Both viruses display tropism towards hepatocytes and cells of the immune system and cause similar liver pathology, where acute hepatitis can progress to chronic hepatitis and to hepatocellular carcinoma (HCC). Two forms of occult hepadnaviral persistence were identified in the woodchuck...

The SOI MOSFET technique is used to overcome the scaling effects. In this work, 20nm SOI MOSFET using Poly silicon as gate material of both Ntype and P-type were designed. The same SOI MOSFET is designed using Molybdenum as gate material for both N-type and P-type and the device characteristics werecompared and analysed.

The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semico...

Two-stage ignition and NTC phenomenon in diesel sprays is investigated by performing 3-D two-phase reacting flow simulations in a dual-fuel engine. Spray processes modeled include fuel atomization, droplet distortion, droplet drag, turbulent dispersion, droplet interactions in terms of collision and coalescence, vaporization, and spray–wall interaction. A validated reaction mechanism is impleme...

In this paper, we propose an Active Body-biasing Controlled (ABC)-Bootstrap PTL (Pass-Transistor Logic) on PD-SOI for ultra low power design. Although simply lowering the supply voltage (VDD) causes a lack of driving power, our boosted voltage scheme employing a strong capacitive coupling with ABC-SOI improves a driving power and allows lower voltage operation. We also present an SOI-SRAM desig...

NOx emissions from diesel engines are a concern both environmental and health perspectives. Recently this attention has targeted cold-start highlighting that emission after-treatment systems not effective in period. Using 6-cylinder, turbocharged, common-rail engine, the current research investigates during using different engine performance parameters. In addition, it studies influence of wast...