The stacking fault ribbon of dissociated 60 dislocations in silicon is imaged with resolution better than 0.33 nm. The dissociation width of the dislocations had been frozen in under high shear stress. It is relaxed by heating within the electron microscope. The dynamics of kinks on the partial dislocations can be analyzed in this way. We find the migration energy of kinks on 90 partials to be ...

Saturation spectra of the excitons confined and localized at several kinds of stacking disorders in layered crystal Bi13 are studied. The quasi-two dimensional exciton localized at the stacking fault interface does not saturate its absorption strength below the density of 105W/cm2 due to the large binding energy and the lateral center-of-mass motion along the interface. On the exciton system as...

2014 Work hardening of fcc metals and diamond structure crystals is considered in a cell model. Depending on stacking fault energy and temperature dynamic recovery can occur by cross slip or climb. The remaining dislocations cause a rehardening stage IV of two different origins and in two temperature ranges before the other dynamic recovery mechanism terminates work hardening. J. Phys. France 5...

TiAl-based alloys have been suggested as advanced high-temperature structural materials replacing the Ni-based superalloys, due to their low density, high modulus, good oxidation resistance and creep resistance. However, their poor ductility and toughness at low temperature limits their applications in industry. Generally, controlling the microstructure and alloying elements are the most useful...

the stacking mechanism of the 1h-4h proton transfer in 4-pyridone, 4-pyridinthione and p-aminopyridineare constructed. for quantitative description of this process by means of the quamtumchemicalmethod density functional theory (dft) the activation energy (