A magnetoelectric mapping is demonstrated between dephasing effects of the magnetic vector potential and effects of an effective vector potential describing spin-orbit interaction. The experiments use spin-dependent mesoscopic quantum transport experiments on the narrow-gap semiconductor InSb and the semimetal Bi, both materials with strong spin-orbit interaction. The spin-orbit-induced antiloc...

Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and spin-polarized quantum transport in MBP from ferromagnetic Ni contacts, in two-dimensional magnetic tunneling structures. We investigate physical properties such as the...

We demonstrate all-electrical spin injection, transport, and detection in heavily n-type-doped Si nanowires using ferromagnetic Co/Al(2)O(3) tunnel barrier contacts. Analysis of both local and nonlocal spin valve signals at 4 K on the same nanowire device using a standard spin-transport model suggests that high spin injection efficiency (up to ~30%) and long spin diffusion lengths (up to ~6 μm)...

We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spinorbit interactions. To quantify the degree of spin coherence, which can be diminished by an intrinsic mechanism where spin and orbital degrees of freedom become entangled in the course of transport involving spin-orbit in...

By viewing current in the detecting lead of a spintronic device as being an ensemble of flowing spins corresponding to a mixed quantum state, where each spin itself is generally described by an improper mixture generated during the transport where it couples to other degrees of freedom due to spin-orbit sSOd interactions or inhomogeneous magnetic fields, we introduce the spin-density operator a...

We demonstrate the ballistic transport of electron spin in the absence of net transport of electron charge. Spin-up electrons move in one direction, while an equal number of spin-down electrons move with the same velocities in the opposite direction, yielding no net charge motion. This effect, also referred to as a ‘pure’ spin current, results from the quantum mechanical interference of the tra...

The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length could be of great importance for the operation of devices based on the electric field manipulation ...

This article reviews spin-dependent transport of carriers in homogenous threedimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection of spin-polarized carriers in semiconductors. Then we review non-equilibrium spin flow including spin drift and diffusion caused by electric fields and concen...