نتایج جستجو برای: single electron device
تعداد نتایج: 1718195 فیلتر نتایج به سال:
Single-electron transistors fabricated using Au islands and CrOx resistive microstrips are reported. To investigate the occurrence of Coulomb blockade in these devices, three types of device designs have been tested. Typical single-electron behavior, conductance modulation by the gate, is observed in the devices which had small overlap area with the gold island. Electron transport mechanism of ...
We investigated the transmission probability of a single electron transmission through a quantum ring device based on the single-band effective mass approximation method and transfer matrix theory. The time-dependent Schrödinger equation is applied on a Gaussian wave packet passing through the quantum ring system. The electron tunneling resonance peaks split when the electron transmits through ...
This paper presents a new exact analytical model for Single electron transistor (SET) applicable for circuit simulation. It was developed based on orthodox theory of single electronics using master equation. A scheme was suggested to determine the most probable occupied electron states. The proposed model is more flexible that is valid for single or multi gate, symmetric or asymmetric devices a...
An analytic treatment of the effects of stray capacitances on cotunneling in single-electron devices with equal junction capacitances is presented. By using analytical forms of the Gibbs free energy and by extending the Jensen-Martinis approximation @Phys. Rev. B 46, 13 407 ~1992!#, we have calculated the threshold voltages and currents for cotunneling in one-dimensional arrays, single-electron...
The single-electron transistor is the fastest and most sensitive electrometer available today. Single-electron pumps and turnstiles are also being explored as part of the global effort to redefine the ampere in terms of the fundamental physical constants. However, the possibility of electrons tunnelling coherently through these devices, a phenomenon known as co-tunnelling, imposes a fundamental...
A novel immobilized fullerene–single wall carbon nanotube (C60–SWCNT) complex was synthesized via a microwave induced functionalization approach. It has been used as a component of the photoactive layer in a bulk heterojunction photovoltaic cell. As compared to a control device with only C60, the addition of SWCNTs resulted in an improvement of both the short circuit current density JSC and the...
We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of the diode bias and local gating allow for the generation of single photons that are entangled with a ...
This paper presents an overview on recent topical studies on electronic properties and device applications of nanocrystalline silicon (nc-Si) quantum dots. We first discuss the electrostatic and quantum-mechanical coherent interactions observed for strongly-coupled double Si nanodots. Secondly we analyze the phononic states and electron-phonon interactions theoretically for the linear chain of ...
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