The diffusivities of boron in silicon oxide and oxynitride have been determined from secondary ion mass spectroscopy measurements of annealed metal-oxide-silicon structures. The results clearly show a decrease in diffusivity with increasing anneal time which is approximately exponential in form. This effect implies a similar time dependence in the concentration of a secondary species, such as h...

Charge-trapping properties of ultrathin gate oxide grown on a nitrogen-implanted silicon substrate were investigated using high-field Fowler–Nordheim injection. By applying an empirical model and monitoring threshold voltage shift due to current stress, it was found that both hole trapping and electron trapping are suppressed in the nitrogen-implanted oxide. Smaller trap-generation rate compare...

Silicon is the most important semiconductor material for electronics industry. However, its indirect bandgap makes it hardly emit light, so its applications in optoelectromcs are limited. Many efforts had been devoted to converting silicon to light-emitting materials, including porous silicon-based devices, nanociystalline Si, and so on. In this work, we report electroluminescence on silicon wi...

We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2xl018 /cm2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of im...

The sidewall defects in selective epitaxial growth ~SEG! of silicon were characterized and the nature of these defects was investigated. Electrical characterization of the sidewall defects was performed using diodes fabricated in structures using the SEG of silicon and chemical-mechanical polishing. Diodes were fabricated with various perimeter to area ratios to extract the bulk and sidewall sa...

Silicon dioxide surfaces, both bulk and porous, were used to anchor the enzyme glucose oxidase. The immobilization protocol was optimized and the samples characterized using X-ray Photoelectron Spectroscopy, Energy Dispersive X-rays coupled to scanning electron microscopy and enzymatic activity measurements. We show that a uniform layer was obtained by activating the oxide before immobilization...

Surface analysis techniques have been used to investigate tin oxide-coated soda lime glass specimens prior and subsequent to their exposure to DC bias, heat, and humidity. All specimens reported here comprise the following layered structure: tin oxide/silicon oxycarbide/glass. Depth profiling using X-ray photoelectron spectroscopy (XPS) clearly shows the interfacial regions in both control samp...

A density functional (DFT–GGA) study on the modification of the Si(001) surface optical response upon adsorption of 9,10-phenanthrenequinone and oxidation is presented. In the first case it is found that intramolecular p–p* transitions as well as adsorption-modified Si bulk states contribute to the optical signal. The molecular contributions differ strongly from the respective signals of gas-ph...

We present a titanium-silicon oxide film structure that permits polarization modulated infrared reflection absorption spectroscopy on silicon oxide surfaces. The structure consists of a ~6 nm sputtered silicon oxide film on a ~200 nm sputtered titanium film. Characterization using conventional and scanning transmission electron microscopy, electron energy loss spectroscopy, X-ray photoelectron ...

Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standin...