The fracture strength of silicon nanowires grown on a [111] silicon substrate by the vapor-liquid-solid process was measured. The nanowires, with diameters between 100 and 200 nm and a typical length of 2 microm, were subjected to bending tests using an atomic force microscopy setup inside a scanning electron microscope. The average strength calculated from the maximum nanowire deflection befor...

Energy bandstructure in silicon nanowires with [100] crystal orientation is calculated using the Tight-Binding (TB) model with supercell approach. Numerical methods are designed according to the physical model to reach an optimal computational performance. Computation results show that the bandstructures of silicon nanowires deviate from that of bulk silicon. The efficiency and accuracy of the ...

Fabricated silicon nanostructures demonstrate mechanical properties unlike their macroscopic counterparts. Here we use a force mediating polymer to controllably and reversibly deform silicon nanowires. This technique is demonstrated on multiple nanowire configurations, which undergo deformation without noticeable macroscopic damage after the polymer is removed. Calculations estimate a maximum o...

Elevated temperature synthesis has been used to generate virtually defect free SiO2 sheathed crystalline silicon nanowires and silica (SiO2) nanospheres which can be agglomerated to wire-like configurations impregnated with crystalline silicon. The SiO2 passivated ~sheathed! crystalline silicon nanowires, generated with a modified approach using a heated Si–SiO2 mix, with their axes parallel to...

Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of...

We report on ensemble Monte Carlo hole transport simulations for small diameter silicon nanowires. The basis for the simulations is provided by band structure calculations using sp3d5s tight-binding scheme. Principal scattering mechanisms considered are hole-bulk acoustic and optical phonon interactions. Both steady-state and transient hole transport characteristics are explored. For the silico...

We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Sinw-ChemFET). Innovations concern the use of networks of suspended silicon N+/P/N+ nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-base...

The production and characterization of ultradense, planarized, and organized silicon nanowire arrays with good crystalline and optical properties are reported. First, alumina templates are used to grow silicon nanowires whose height, diameter, and density are easily controlled by adjusting the structural parameters of the template. Then, post-processing using standard microelectronic techniques...

GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. In this work, we provide some of the key elements for obtaining a high yield of Ga...

The reverse micelle method was used for the reduction of a tin (Sn) salt solution to produce metallic Sn nanoparticles ranging from 85 nm to 140 nm in diameter. The reverse micellar system used in this process was hexane-butanol-cetyl trimethylammonium bromide (CTAB). The diameters of the Sn nanoparticles were proportional to the concentration of the aqueous Sn salt solution. Thus, the size of ...