The development of low temperature, thin film transistor processes that has enabled flexible displays also presents opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, n...

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into RGB parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This ...

The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, whe...

Spectroscopic ellipsometry and high resolution transmission electron microscopy have been used to characterize microcrystalline silicon films. We obtain an excellent agreement between the multilayer model used in the analysis of the optical data and the microscopy measurements. Moreover, thanks to the high resolution achieved in the microscopy measurements and to the improved optical models, tw...

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does no...

As we know sol-gel is one of the most important techniques for thin film preparation. In this paper, high transmission silica thin films have been prepared by dip-coating process from a new silicon-alkoxide solution. The prepared sol was stable for 45 days which is very important to characterize the coating process. The optical properties as a function of aging time, withdrawal rate, and he...

High frame rate infrared scene generation depends on high performance digital processors that are tightly coupled to infrared emitter arrays. Massively parallel image generation hardware can realize the type of high throughput, high frame rate processing that will characterize the next generation of scene generators. This work outlines projects in massively parallel, high throughput image gener...

Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the “metal-induced nanocrystalline mechanism”, i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix a...

Silicon-on-nitride ridge waveguides are demonstrated and characterized at midand near-infrared optical wavelengths. Silicon-on-nitride thin films were achieved by bonding a silicon handling die to a silicon-on-insulator die coated with a low-stress silicon nitride layer. Subsequent removal of the silicon-on-insulator substrate results in a thin film of silicon on a nitride bottom cladding, read...

This paper describes a method for removing oxide film from the surface of silicon wafers using an inert gas fusion impulse furnace and precise determination of bulk oxygen within the wafer. A silicon wafer was cut to about 0.35 g (6 x 13 x 2 mm) and dropped into a graphite crucible. The sample was then heated for 40 s at 1300 degrees C. The wafer's oxide film was reduced by carbon and removed a...