We demonstrate a time-efficient and low-cost approach to fabricate Si3N4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method and SiC nanodome structures with Si3N4 coating are formed via dry etching and thin film deposition process. By using this method, a significant broadband surface antireflection and a considerable omnidirectional lumin...

We demonstrate planar Si3N4 ring resonators with ultra-high quality factors (Q) of 19 million, 28 million, and 7 million at 1060 nm, 1310 nm, and 1550 nm, respectively. By integrating the ultra-low-loss Si3N4 ring resonators with laterally offset planar waveguide directional couplers, optical add-drop and notch filters are demonstrated to have ultra-narrow bandwidths of 16 MHz, 38 MHz, and 300 ...

Si3N4/BN fibrous monoliths were prepared with 4 wt% Y2O3 added as a sintering aid to the Si3N4. Residual carbon, present in the billet before hot-pressing, was shown to influence the final microstructure. The sintering aid glass, known to migrate into the BN cell boundaries during hotpressing, was not sufficient in quantity to prevent premature shear failure when samples were tested in flexure....

This paper reviews investigations of silicon nitride–silicon carbide micro–nanocomposites from the original work Niihara, who proposed concept structural ceramic nanocomposites, to more recent on strength and creep resistance these unique materials. Various different raw materials are described that lead formation nanosized SiC within Si3N4 grains (intragranular) at grain boundaries (intergranu...

In this research, various types of nitride additives were incorporated into titanium diboride attaining dense TiB2-based ceramics by field-assisted sintering technique. The addition different additives, namely Si3N4, BN, AlN, and TiN, significantly improved the sinterability TiB2, achieving near fully ceramics. X-ray diffraction analysis microstructural evaluation confirmed presence h-BN compou...

Consolidation and fracture dynamics in nanophase amorphous Si3N4 are investigated using 106-atom moleculardynamics simulations. At a pressure of 15 GPa and 2000 K, the nanophase system is almost fully consolidated within a fraction of a nanosecond. The consolidation process is welldescribed by the classical theory of sintering. Under an applied strain the consolidated system develops several cr...

Water-enhanced degradation of p-type low temperature polycrystalline silicon thin film transistors under negative bias temperature (NBT) condition is studied. H2O penetration into gate oxide network and the role of H2O during NBT stress are confirmed and clarified respectively. To prevent H2O diffusion, a combination of a layer of PECVD SiO2 and a layer of PECVD Si3N4 as passivation layers are ...

This paper presents the impact of parameter optimization of n-type MOSFET for direct tunneling gate current using ultrathin Si3N4 and HfO2 with EOT (Equivalent Oxide Thickness) of 1.0 nm. This work is compared with TCAD santaurus simulation results to verify that accuracy of the model and excellent reduction in gate leakage with the introduction of the high-k gate dielectrics (HfO2 & Si3N4) in ...

Modern transmission electron microscopes (TEM) allow utilizing the spherical aberration coefficient as an additional free parameter for optimizing resolution and contrast. By tuning the spherical aberration coefficient of the objective lens, isolated nitrogen atom columns as well as the Si–N dumbbells within the six-membered ring were imaged in b-Si3N4 along [0 0 01] and [0 0 0 1̄] projections w...