نتایج جستجو برای: si mixed oxides
تعداد نتایج: 313727 فیلتر نتایج به سال:
Introduction: Presolar grains are particularly abundant in primitive extraterrestrial materials such as IDPs [e.g. 1-3] and the matrices of the least altered chondrites [4-6]. To date, the presolar silicate and oxide inventories of the primitive chondrites Acfer 094 [4-7] and ALHA 77307 [7] have been reported extensively. More recently, the search for presolar silicates and oxides has been exte...
In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration wit...
Suppression of Boron Penetration in P-Channel MOSFETs Using Polycrystalline Si1 x yGexCy Gate Layers
Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1 x yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1 xGex gate...
The concept of a nanocrystal memory [1,2] has several attractive features. First, it overcomes limitations of current (Flash)-EEPROM technologies: higher endurance and lower voltages become possible enabling further scaling and memories of higher density. Second, the retention characteristics can be possibly tailored from DRAM-like to EEPROM-like memories by adjusting the cluster size and their...
O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, and A. Pérez-Rodríguez EME, Departament d’Electrónica, IN2UB, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain J. Montserrat Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain C. Bonafos, G. BenAssayag, and S. Schamm Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig, 31055 Toul...
Conductive oxides RuOx as alternative electrode on high-k HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx /HfO2/Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valenceand c...
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