Abstract All‐solid‐state switches are one of the core components pulsed power supply systems. However, voltage level a single switch is limited. By optimizing chip structure, can be improved. Due to immaturity production process and positive correlation between blocking on‐resistance switch, it difficult improve continuous forward current simultaneously. The series‐connected way increase switch...

The growing importance to model three-dimensional effects has made geometry preprocessing the bottle neck to efficient three-dimensional simulation in many areas. Especially, for semiconductor process and device simulation, as well as interconnect applications two-dimensional methods which have worked well in the past have become obsolete. More efficient algorithms have to be employed for the v...

We observe a series of discontinuities in the above gap current-voltage characteristics of highly transmissive NbySi superconductor-semiconductor interfaces. The bias at which each switch occurs decreases in quantized steps as a function of temperature and magnetic field. The observed step size is the same for both dependencies. We propose that the steps correspond to supercurrent quantization ...

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can ‘‘switch’’ charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eg8 centers ~a hole tr...

Static and dynamic properties of dispersive optical bistability (OH) in semiconductor lasers biased from below to above threshold have been investigated theoretically. The OH result is found to be varied continuously from below to above threshold with its maximum value located just above threshold; this result has been verified experimentally. A much faster switch-off of OH can be expected when...

Abstract: With rapid development in power semiconductor devices, the usage of power electronic systems has expanded to new and wide application range that include residential, commercial, aerospace and many others. Power electronic interfaces e.g. switch mode power supplies (SMPS) have proved to be superior over traditional linear power supplies. However, their non-linear behavior puts a questi...

Abstract To realize a better radio frequency (RF) communication system, the RF switch, as an important module, is used to cooperate with other devices form front end for optimizing performances. This paper designs single-pole multi-throw (SPMT) which exhibits low insertion loss of 0.57 dB at 1.9 GHz under voltage 2.2 4.7 V. The switch fabricated using 130 nm silicon-on-insulator (SOI) complemen...

To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach-Z...