نتایج جستجو برای: semiconductor metal boundary

تعداد نتایج: 405674  

Journal: :Nano letters 2011
Elena Khon Andrey Mereshchenko Alexander N Tarnovsky Krishna Acharya Anna Klinkova Nishshanka N Hewa-Kasakarage Ian Nemitz Mikhail Zamkov

The nature of exciton-plasmon interactions in Au-tipped CdS nanorods has been investigated using femtosecond transient absorption spectroscopy. The study demonstrates that the key optoelectronic properties of composite heterostructures comprising electrically coupled metal and semiconductor domains are substantially different from those observed in systems with weak interdomain coupling. In par...

2012
Amit Lakhani Ming C. Wu Xiang Zhang Eli Yablonovitch Amit Manmohan Lakhani

Metal-optic and Plasmonic Semiconductor-based Nanolasers

2017
Tanushree Bala Kevin M. Ryan

A facile phase transfer procedure is described for the formation of uniform silver metal tips on II–VI semiconductor nanorods. Judicious choice of a functional ligand dimethyl phenol (DMP) which binds to the semiconductor rod in the organic phase enables the transfer of metal ions from the aqueous phase and their reduction onto the nanorod. The nanorod hybrids can be assembled into perpendicula...

2014
Jin-Woo Han Dong-Il Moon Jae Sub Oh Yang-Kyu Choi M. Meyyappan

Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...

2004
Min Shen Semion Saikin Ming - Cheng Cheng

We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhan...

Journal: :Nanotechnology 2005
François Triozon Philippe Lambin Stephan Roche

The electronic structure and the conductance of a carbon nanotube based metal/semiconductor/metal intramolecular junction is investigated numerically. The nature of electronic states at the interfaces and in the semiconductor section is analysed. The quantum conductance of the system is calculated in the coherent regime and its variations with energy and length are shown to be related to contri...

Journal: :iranian journal of science and technology (sciences) 2014
a. habibpour

we have simulated the carrier concentration and temporal response characteristics of a back-gated metal- semiconductor-metal (bg-msm) photodetector in one dimension as a function of optical pulse position on the active region in an equilibrium condition (without bias voltage to the photodetector). we have adopted a nonlinear ambipolar transport model to simulate the behavior of photo-generated ...

Journal: :Photonics and Nanostructures - Fundamentals and Applications 2007

Journal: :ACS nano 2013
Zhuhua Zhang Xiaolong Zou Vincent H Crespi Boris I Yakobson

Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all display a substantial magnetic moment of ∼1 Bohr magne...

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