The current–voltage characteristics of a Schottky diode are simulated numerically using the thermionic emission-diffusion mechanism and considering a Gaussian distribution of barrier heights, with a linear bias dependence of both the mean and standard deviation. The resulting data are analyzed to get insight into the effects of distribution parameters on the barrier height, activation energy pl...

In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By...

In this paper, an optical sensor based on a cadmium sulfide (CdS) nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT) method. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results revealed that the nanobelt had a hexagonal wurtzite structure of CdS and presented good crystal quality. A single nanobelt Schottky contact optica...

In this paper we report on experimental results in solving defect-related issues limiting the size and performance of 4H-SiC based power Schottky diodes. Several techniques improving wafer quality were used in line to fabricate power Schottky diodes with high current capability for blocking voltage over 600 V. Results of X-ray investigation of wafers on every step of treatment from initial wafe...

An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...

Mitsubishi Electric has developed a 1.7 kV hybrid SiC power module consisting of 6th generation Si-IGBT and SiC Schottky Barrier Diode (SBD). Adopting SiC-SBD enables a significant power loss reduction during the diode turn-off and IGBT turn-on. And adopting of 6th generation IGBT enables the reduction of the IGBT turn-off loss. By using the newly developed chip set, high temperature enduring g...

Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temper...

In this paper, we report a new 4 H-silicon carbide (SiC) lateral dual sidewall Schottky (LDSS) rectifier on a highly doped drift layer consisting of a high-barrier sidewall Schottky contact on top of the low-barrier Schottky contact. Using twodimensional (2-D) device simulation, the performance of the proposed device has been evaluated in detail by comparing its characteristics with those of th...