نتایج جستجو برای: schottky cell
تعداد نتایج: 1687676 فیلتر نتایج به سال:
We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/ Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devic...
A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO x /Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO x /Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n(+)-Si acts as an Schottky diode. This is the first RRAM cell structure that employs metal/semiconductor Schottky diode f...
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a threeterminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed ...
Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmissio...
Motivation AlGaN/GaN HEMT rf transistors are rapidly developing due to their high output power density, high operation voltage and high input impedance. Ni-based gate metallization is widely used to form the Schottky gate contacts. However, temperature and electric field levels are higher in AlGaN/GaN compared to traditional III-Vs and therefore the diffusion of Ni into AlGaN/GaN constitutes a ...
In an article by Sasaki and Yoshida (2000), we encountered Schottky groups of genus 2 as monodromy groups of the hypergeometric equation with purely imaginary exponents. In this paper we study automorphic functions for these Schottky groups, and give a conjectural infinite product formula for the elliptic modular function λ.
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller con...
تحقیقات مختلف اثبات نموده اند که رشد و محتوای بیوشیمیایی روتیفرها می تواند تحت تاثیر نوع غذا و غلظت مواد غذایی تغییر نماید. ریز جلبک ها به عنوان یکی از منابع غذایی مهم برای کشت روتیفرها به ویژه از لحاظ شاخص های نظیر رشد، بقا، میزان پروتئین، چربی و اسیدهای چرب، ضروری می باشند. لذا تحقیق حاضر جهت مقایسه جلبک خشک (کلرلای پودری) و جلبک های تازه (ایزوکرایسیس گالبانا و نانوکلروپسیس آکولاتا) بر رشد، ت...
Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes. A device with ohmic contacts at both the sides was also fabricated for comparison. The current-voltage (I-V) measurements for the Schottky diode show clear rectifying behavior and no reve...
Indium oxide (In2O3) tower-shaped nanostructure gas sensors have been fabricated on Cr comb-shaped interdigitating electrodes with relatively narrower interspace of 1.5 μm using thermal evaporation of the mixed powders of In2O3 and active carbon. The Schottky contact between the In2O3 nanotower and the Cr comb-shaped interdigitating electrode forms the Cr/In2O3 nanotower Schottky diode, and the...
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