This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on growth aluminum thin films a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed strong (0001) fiber texture for both Si(100) (111) substrates, hetero-epitaxial AlN layer, which is only few nanometers in size, grown MBE o...

Canonical discrete quantum error correction (DQEC) schemes use projective von Neumann measurements on stabilizers to discretize the syndromes into a finite set, and fast unitary gates are applied recover corrupted information. Quantum (QEC) based continuous measurement, known as (CQEC), in principle, can be executed faster than DQEC also resource efficient. However, CQEC requires meticulous fil...

Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as back-gate molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While the heavy ion Tellurium creates too many damages gallium layer, both Silicon Selenium show promising results combined with MBE-grown high-quality 2DEGs. Similar 2DEG...

A low-voltage test system is used to qualify various III-V semiconductor materials as photocathodes for the SLC. The system features a load lock to introduce samples, high pumping speed, a sensitive residual gas -analyzer, and an infrared temperature detector. Heat cleaning, cesiation, and oxidation procedures have been studied to optimize cathode activation for achieving an optimum NEA surface...

Single-crystal atomic-layer-deposited (ALD) Y2O3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ˆ 6 and GaAs(111)A-2 ˆ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the cr...

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% i...