A high-order terminal iterative learning control (ILC) scheme is proposed where only the terminal output tracking error instead of the entire output trajectory tracking error is used to update the control proole. A convergence condition is obtained for a class of uncertain discrete-time time-varying linear systems. An application example is presented, by simulation, for a rapid thermal processi...

A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.

INTRODUCTION With the present downscaling of MOS devices, gate oxides have been pushed towards their limit regarding leakage current and reliability. In this context, traditional dry oxides are expected to be limited to at least 1.6nm[1]-2.5nm[2]. In this paper, new RTP process, socalled ISSG (In Situ Steam Generated) oxidation, is proposed as an alternative for thickness as thin as 1.5nm2.5nm....

Thermal ALD deposited Al2O3 films on silicon show marked difference in surface passivation quality as a function of annealing time (using rapid thermal process). An effective and quality passivation is realized in short anneal duration (~100s) which is reflected in the low surface recombination velocity (SRV <10 cm/s). The deduced values are close to the best reported SRV obtained by high therm...

An interface study of the effect of rapid thermal annealing (RTA) in the temperature range 523-1273 K for 5-40 s on a nominally [(50A Si/10A W) x 9] amorphous multilayer (ML) deposited on an Si(100) wafer was performed by X-ray reflectivity and diffusescattering measurements at grazing incidence. The results of the X-ray reflectivity and diffuse-scattering measurements were evaluated by Fresnel...

We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples a conventional thermal annealing (CTA) and a rapid thermal annealing (RTA). We find that RTA improves the electrical properties. Measurements of gauge factors have been carried out on both films. We concl...