Chromium oxide (α-Cr2O3) thin films were prepared using thermal annealing of chromium (Cr)films deposited on quartz substrates by direct current (DC) magnetron sputtering. The annealingprocess of the films was performed for different times of 60, 120,180 and 240 min. The influenceof annealing time on structural, morphological and optical properties of the prepared films wasinvestigated by diffe...

TiO2 thin film was deposited on non-heated Si(1 0 0) substrate by RF magnetron sputtering. The as-deposited films were annealed by a conventional thermal annealing (CTA) and rapid thermal annealing (RTA) at 700 and 800 8C, and the effects of annealing temperature and method on optical properties of studied films were investigated by measuring the optical band gaps and FT-IR spectra. And we also...

An interface study of the effect of rapid thermal annealing (RTA) in the temperature range 523-1273 K for 5-40 s on a nominally [(50A Si/10A W) x 9] amorphous multilayer (ML) deposited on an Si(100) wafer was performed by X-ray reflectivity and diffusescattering measurements at grazing incidence. The results of the X-ray reflectivity and diffuse-scattering measurements were evaluated by Fresnel...

Soft breakdown properties a€ected by photon energy during rapid thermal post-oxidation annealing (POA) of ultrathin gate oxide are investigated. Generally, breakdown can be classi®ed into normal hard breakdown (HBD) and soft breakdown (SBD). It was found that the occurrence of HBD and SBD depends on the process and stress ®eld. Samples with front and back sides illuminated by a tungsten±halogen...

In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C–V ) curves clearly indicate the charge storage in the ...

Use of high ramp rates ~.400°C/s! in rapid thermal annealing after ion implantation leads to experimentally observed improvements in junction depth and the reverse narrow-channel effect. However, a straightforward explanation for this effect has been lacking. Via modeling, we find that increasing the heating rate permits clusters with dissociation energies lower than the maximum of 3.5-3.7 eV t...

The nanocomposite magnet, which is composed of exchange coupled nanocrystalline soft (Fe3B, α-Fe) and hard (Nd2Fe14B) magnetic phases, was first reported by Coehoorn et al. [1], and the theoretical basis of it was reported by Kneller and Hawig [2]. Nd-Fe-B based nanocomposite magnet has attracted considerable research interest due to its excellent magnetic properties with relatively low amount ...

A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.

In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors QDIPs at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700 °C, as a result of thermal interdiffusion of the quantum dots QDs . Correspondingly, the spectral response from the ann...

The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) has been studied. A significant improvement in photoemission, photocurrent density, and spectral response has been observed with post-growth annealing. The optimal anneal temperature was found to be 700 ° C, which lead to an 18% improvement in current density from 4.9 mA cm -2 for as-grown sample to 5.8 mA cm -2 . ...