نتایج جستجو برای: r hall

تعداد نتایج: 510801  

1997
F. G. Monzon Mark Johnson M. L. Roukes

We present a new magnetoelectronic device consisting of a mm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B'(r), which induces a Hall resistance, RH , in the microjunction. External...

2012
Jie Du JIE DU

This paper provides a survey for the latest developments in the theory of affine q-Schur algebras and Schur–Weyl duality between affine quantum gln and affine type A Hecke algebras. More precisely, we will establish, on the one side, an isomorphism between the double Ringel–Hall algebra D△(n) of a cyclic quiver △(n) and the quantum loop algebra of gln, and establish, on the other side, explicit...

2013
John DiCola

Student Government investigating Senate elections held: two disputed by Tim Trainer and John DiCola The S tuden t Senate survived a n a l le g a t io n o f fraud in Cavanaugh Hall, and Keenan hall’s refusal to subm it its ballot b o x t o S t u d e n t S e n a t e inspection to elect forty-five members to this year’s edit ion of the Senate. Included among those elected were Free University head...

Journal: :Acta Crystallographica Section A Foundations of Crystallography 1985

Journal: :Journal of Electric Propulsion 2023

Abstract The R-200 low power Hall thruster unit completed a 96 kNs endurance test, during which the anode mass flow rate was adjusted to maintain constant of 250 W throughout campaign. test performed at Rafael, while initial performance validation conducted ESTEC. At end exhibited nearly unchanged and did not reach its end-of-life. During characterized 5 times in 100–250 discharge range, cerami...

Journal: :Physical review letters 2007
J Gabelli G Fève T Kontos J-M Berroir B Placais D C Glattli B Etienne Y Jin M Büttiker

We report on the GHz complex admittance of a chiral one-dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imagina...

Journal: :Physical review letters 1994
Polyakov Shklovskii

Activated dissipative conductivity ¢==o-*~exp(-A/T) and the activated deviation of the Hall conductivity from the precise quanfizafion &r~v=~i e2 /h f~exp ( -A /T ) are studied in a plateau range of the quantum Hall effect. The prefactors cr*~ and o*~ are calculated for the case of a long-range random potential in the fxa~ework of a classical theory. There is a range of temperatures Tx << T<< T...

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