A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The architecture based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports operation and improves the gain amplifier. Besides to tail current source requirement (OTA) removed by using flipped follower structure at input pair along wi...

Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates ...

Since the rst reported oating-gate structure in 1967, oatinggate transistors have been used widely to store digital information for long periods in structures such as EPROMs and EEPROMs. Recently, oating-gate devices have found applications as analog memories, analog and digital circuit elements, and adaptive processing elements. Floating-gate devices have found commerical applications, e.g. IS...

A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C-V characteristic is quantitativ...

A novel 4-quadrant analog multiplier using Floating Gate MOS (FGMOS) transistors operating in saturation region are implemented. Floating gate MOSFETs are being utilized in a number of new and existing analog applications. These devices are not only useful for designing memory elements but also we can implement circuit elements. The main advantage in FGMOS is that the drain current is proportio...

High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The pho...

A non-volatile floating-gate MOSFET based trimmable current cell suitable for use in a current steering DAC and implemented in CMOS technology is presented. The current source can be programmed to an accuracy corresponding to 12-bit resolution using either hot electron injection to add charge to the floating-gate or hot hole injection to remove charge. The output current from the circuit can be...

nano-crystalline Si dots of dimensions of 8nm have been incorporated into a variety of Coulomb blockade and floating gate memory devices. Structures include vertical transistor, planar electrode, nanoscale channel junction and 2-gate trench structure. Ballistic transport, Coulomb oscillation and memory effects are clearly demonstrated

An area efficient technique for tuning floatinggate circuits is described. The effective threshold voltage seen from a control gate can be programmed to virtually any value. The floating-gate transistor (FGMOS) may be used to implement low-power/low-voltage digital -and/or analog circuits.