We investigate quantum efficiency limitations in InGaAsP/InP multiquantum-well ~MQW! laser diodes emitting at 1.5 mm. At room temperature, the internal differential efficiency above threshold is found to be reduced mainly by increasing Auger recombination and spontaneous emission within the quantum wells. These carrier loss increments are commonly assumed negligible due to MQW carrier density c...

Voltage, temperature, and intensity dependence of saturable absorption in InGaAs/InP multiple quantum wells are investigated and related to the lasing characteristics of intracavity loss modulated InGaAs/InP quantum well lasers. Bistability in the static laser light output/absorber voltage characteristic arises from the shape of the measured absorption/ voltage/intensity surface of the quantum ...

We investigate the polarization fluctuations caused by quantum noise in quantum well vertical cavity surface emitting lasers (VCSELs). Langevin equations are derived on the basis of a generalized rate equation model in which the influence of competing gain-loss and frequency anisotropies is included. This reveals how the anisotropies and the quantum well confinement effects shape the correlatio...

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Low dimensional structures have come a long way from being mere examples of applied quantum mechanics tv widespread applications in many modem devices and instruments. Quantum well, quantum cascade and quantum dot lasers make use of the very fundamental idea of carrier confinement within dimenswns that match their de Broglie wavelength. Quantum well lasers are used in many modern optoelectronic...

This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.

The low frequency response and damping behavior of four quantum well (4QW) gradedindex separate confinement heterostructure (GRINSCH) and SCH strained-layer lasers are compared. The SCH laser is shown to be better in both respects due to a shorter carrier capture time into the quantum wells. A record 3-dB bandwidth of 28 GHz is reported for a 150 pm cavity length 4QW strained-layer SCH laser. T...

The Auger and radiative combination carrier lifetimes in HgCdTe bulk and quantum-well structures, with band gaps in the wavelength range 2-5 pm, are calculated. The Auger recombination rate in a HgCdTe quantum well (QW) is shown to be significantly smaller than that in bulk material. Threshold current densities of HgCdTe double-heterostructure (DH) and multiquantum-well (MQW) lasers are calcula...

Quantum measurement of amplitude fluctuation is performed by the injection of 2.5-dB amplitude-squeezed light produced by a quantum-well laser into the dark port of a beam splitter as the meter wave. It is shown that the measurements satisfy the criteria of quantum nondemolition measurement. The measured transfer coefficient and the quantum-state preparation ability are 1.07 and 0.8, respectively.