This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (1 0 0) over the 1.55-mm region at room temperature (RT) is achieved using ultra-thin GaAs interlayers underneath the QDs. The GaAs interla...

We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV ) is obtained for...

1. When pDj < pDi, the demand allocation is xDj = min{max{QD(pDj )− θj , QD(pDj )− yS , 0}, yDj}, (A1a) xDi = min{max{QD(pDi)− yDj − θi, QD(pDi)− yDj − yS , 0}, yDi}, (A1b) xS = min{max{QD(pDi)− yDi − yDj , θi},max{QD(pDj )− yDj , θj}, yS}. (A1c) 2. When pD2 = pD1, the demand allocation is xDi = min { max { QD(pDi)− θi 2 , QD(pDi)− yS 2 , QD(pDi)− θi − yDj , QD(pDi)− yS − yDj , 0 } , yDi} , (A2...

A key feature of epitaxial semiconductor crystal growth is the possibility of realizing different surface morphological features when growing one material on another. This is driven by many factors, of which the relative lattice mismatch between the materials and the nature of the resultant strain is particularly crucial. Under appropriate conditions, elastic strain relaxation can lead to spont...

Due to the superb tunable properties of quantum dots (QDs), they have been largely studied in past few decades for many promising applications. However, a single nanocrystal QD, its are limited due tunability composition, charge carrier dynamics, band alignment, and so on. Thus, solve problem, enhance their physical, chemical, electrical, optical properties, heterostructure nanocrystals (NCs), ...

Interaction between porphyrins and quantum dots (QD) via energy and/or charge transfer is usually accompanied by reduction of the QD luminescence intensity and lifetime. However, for CdSe/ZnS-Cys QD water solutions, kept at 276 K during 3 months (aged QD), the significant increase in the luminescence intensity at the addition of meso-tetrakis (p-sulfonato-phenyl) porphyrin (TPPS4) has been obse...

We report on the design, growth, and fabrication of InAs/InP quantum dash (QD) gain materials their use in lasers for optical network applications. A noise performance comparison between QD well (QW) Fabry-Perot (F-P) has been made. By using material we have successfully developed assembled C-band coherent comb laser (CCL) modules with an electrical fast feedback loop control system to ensure a...

The generalized Fibonacci cube Qd(f) is the graph obtained from the d-cube Qd by removing all vertices that contain a given binary word f as a factor; the generalized Lucas cube Qd( ↽Ð f ) is obtained from Qd by removing all the vertices that have a circulation containing f as a factor. In this paper the Wiener index of Qd(1) and the Wiener index of Qd( ↽Ð 1) are expressed as functions of the o...

Spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs) and vertical external-cavity surface-emitting lasers (spin-VECSELs) are of interest since their output polarization can be manipulated by spin-selective pumping, either optical or electrical. These devices, using quantum dot (QD) material for the active region, have shown instability (periodic oscillations) and polarization sw...