Design and construction of a stable current supply with protection circuits are described. The reported circuit provides a high-stable and high-level current variable from 0.5-1.2 A with the protect ion circuits to prevent over load current, voltage and off-range temperature operation. A detailed analysis of the circuit parameters is given and the time behaviors of the load voltage/current and ...

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison wi...

Experiments have been performed with a 100-kJ pulse-forming network (PFN) to characterize the transient behavior of semiconductor diodes serving as capacitor-protecting devices. In addition to the experiments, computer techniques are used to illustrate and predict the dynamic behavior ofPFN diodes. From analyses of the data collected, it was determined that in a PFN under specific loading condi...

The thyristor is a power semiconductor device with the control terminal called grid or gate (G). The device name comes from the similarity of operation with the gas triode: thiratron transistor. Because the thyristors are mainly used in the controlled rectifier structures, the technical literature calls them as SCR (Semiconductor Controlled Rectifiers) devices. After the series manufacture star...

With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIM...

Noise immunity and low-energy computing have become limiting factors in the semiconductor roadmap as transistor feature sizes shrink. The subject of our study is the probabilistic switch, implemented in the complementary metal–oxide– semiconductor (CMOS) domain, referred to as a probabilistic CMOS (PCMOS) switch, whose behavior is rendered probabilistic by noise. In conducting this study, we ar...

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonst...

The range of DC output voltage the photovoltaic cell is about 20 - 45 V dc . At generally electrical load use an AC 220 ac for one phase and a 380 three load. So that has to raise up 400 then it changed with inverter. In this paper, conversion ratio high gain power converter will be analyzed simulated PSIM software. From analysis simulations show can achieved Vdc from around input Vdc, duty cyc...