نتایج جستجو برای: polymer thin film

تعداد نتایج: 272367  

2009
Edwin P. Chan Kirt A. Page Se Hyuk Im Derek L. Patton Rui Huang Christopher M. Stafford

We present a new wrinkling-based measurement technique for quantifying the viscoelastic properties of confined polymer thin films. This approach utilizes real-time laser-light scattering to observe the kinetics of thermally-induced surface wrinkling, which evolves isothermally as a function of annealing time. Specifically, wrinkling is induced by applying a thermal stress to a polystyrene film ...

Journal: :Soft matter 2015
Sarika C K Gaurav Tomar J K Basu Uwe Thiele

We show that a film of a suspension of polymer grafted nanoparticles on a liquid substrate can be employed to create two-dimensional nanostructures with a remarkable variation in the pattern length scales. The presented experiments also reveal the emergence of concentration-dependent bimodal patterns as well as re-entrant behaviour that involves length scales due to dewetting and compositional ...

2012
Joseph L. Keddie

Although the volume relaxation of bulk homopolymer glasses is thoroughly understood, many questions remain about the volume relaxation of polymers cast from solvent. Furthermore, in polymer thin films, the possible effects of confinement, surfaces and interfaces on relaxation are largely unexplored. Measurements of the film thickness of spin-cast poly(methyl methacrylate) thin films over extend...

Journal: :Langmuir : the ACS journal of surfaces and colloids 2005
Fajun Zhang Gabriel Baralia Adrian Boborodea Christian Bailly Bernard Nysten Alain M Jonas

The effect of roughness on the dewetting behavior of polyethylene thin films on silicon dioxide substrates is presented. Smooth and rough silicon dioxide substrates of 0.3 and 3.2-3.9 nm root-mean-square roughness were prepared by thermal oxidation of silicon wafers and plasma-enhanced chemical vapor deposition on silicon wafers, respectively. Polymer thin films of approximately 80 nm thickness...

2011

©ALLVIA, Inc. 2011 Sunnyvale, CA www.allvia.com Page 1 Interposers between ICs and package substrates that contain thin film capacitors have been used previously in order to improve circuit performance. However, with the interconnect inductance due to wire bonds being high, the benefits of thin film capacitors have not been fully realized. Replacing the wire bonds with Through Silicon Vias (TSV...

2004
Michael C. Hamilton Sandrine Martin Jerzy Kanicki

We present a method of extracting the field-effect mobility from the transfer characteristics of organic polymer thin-film transistors (OP-TFTs), in both the linear and saturation regimes, by accounting for the dependence of the mobility on the gate bias, which translates to a dependence on the accumulated density of majority charge carriers in the channel. This method is compared to the common...

Journal: :Journal of the American Chemical Society 2005
Seung-Hyun Hur Myung-Han Yoon Anshu Gaur Moonsub Shim Antonio Facchetti Tobin J Marks John A Rogers

We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithicall...

Journal: :Nano letters 2006
Hoon Eui Jeong Sung Hoon Lee Pilnam Kim Kahp Y Suh

A simple, yet innovative, method is presented for fabricating high-aspect-ratio polymer nanohairs (aspect ratio >20) on a solid substrate by sequential application of molding and drawing of a thin polymer film. The polymer film was prepared by spin coating on a rigid or flexible substrate, and the temperature was raised above the polymer's glass transition while in conformal contact with a poly...

2011
Sang-Jin Cho In-Seob Bae Young Gug. Seol Nae-Eung Lee Yong Seob Park Jin-Hyo Boo

The effects of gate dielectrics material in organic thin film transistors (OTFTs) were investigated. The gate dielectrics were deposited by plasma enhanced chemical vapor deposition (PECVD) with cyclohexane and tetraethylorthosilane (TEOS) respectively used as organic and inorganic precursors. The gate dielectrics (gate insulators) were deposited as either organic plasma-polymer or organic–inor...

Journal: :Micromachines 2015
Su Xu Yan Li Yifan Liu Jie Sun Hongwen Ren Shin-Tson Wu

1 The College of Optics and Photonics (CREOL), University of Central Florida, 4000 Central Florida Blvd, Orlando, FL 32816, USA; E-Mail: [email protected] 2 National Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; E-Mail: [email protected] 3 Department of Polymer-Nano Science and Technology, C...

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