A Comb Drive Actuator is a basic actuation device of MEMS. MEMS applications often require large force, large displacement, low-power and energy-efficient actuators. Low power consumption is highly desirable not only for economic reasons, but also for heat generation considerations. In this paper, different types of structural design of Comb Drive Actuator that is Fixed-Fixed Flexure Beam, Crab...

There is evidence to support the claim that speedbreakers can cause accidents and injury. When a vehicle approaches a speed-breaker at a speed greater than some threshold velocity, the risk of accident or injury is substantial. Speed-breakers are inconspicuous in low visibility conditions, like at night, or when there is fog, rain or snow. This problem is particularly acute in developing countr...

We present the first piezoelectrically modulated resistive switching device based on piezotronic ZnO nanowire (NW), through which the write/read access of the memory cell is programmed via electromechanical modulation. Adjusted by the strain-induced polarization charges created at the semiconductor/metal interface under externally applied deformation by the piezoelectric effect, the resistive s...

Here, a new method is demonstrated that uses sideways pulsed laser deposition to deliberately bend nanowires into a desired shape after growth and fabricate arc-shaped composite nanowire arrays of a wide range of nanomaterials. The starting nanowires can be ZnO, but the materials to be deposited can be metallic, semiconductor, or ceramic depending on the application. This method provides a gene...

We present a methodology for the identification of transport parameters for Gallium Nitride (GaN) based semiconductor materials and devices. A Monte Carlo (MC) approach has been employed to investigate the electron transport in GaN and AlGaN, materials that are very important in device applications of high-power, high-frequency electronics. Our model is validated against measured data and compa...

Temperature and doping dependencies of electron mobility in InP semiconductor has been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low tempera...

An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices, Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of ...

In this paper, strain transfer efficiencies from a single crystalline piezoelectric lead magnesium niobate-lead titanate substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely, gold-thermo-compression and polymer-based SU8...

Unusually large spontaneous and piezoelectric fields in the III-V nitrides have led to the making of an entirely new class of two-dimensional electron gas. Fluctuation from a perfectly periodic binary structure in highly polar semiconductor alloys present the same physical situation as a random distribution of microscopic dipoles. The excess dipole distribution in the barrier layers is evaluate...

Optically modulated internal strain has been observed in InGaN quantum dots (QDs) deposited on SiN(x) nano masks. The modulated internal strain can induce a number of intriguing effects, including the change of refractive index and the redshift of InGaN A(1)(LO) phonon. The underlying mechanism can be well accounted for in terms of the variation of internal strain through the converse piezoelec...