In the present work we model a Multiquantum Well structure Separate Absorption and Charge Multiplication Avalanche Photodiode (MQW-SACM-APD), while the Absorption region coincide with the MQW. We consider the nonuniformity of electric field using split-step method in active region. This model is based on the carrier rate equations in the different regions of the device. Using the model we obtai...

We present quantitative results of light coupling from SU8 waveguides into silicon p-n photodiodes in monolithically integrated structures. Multimode, 12 mm thick, and 20 mm wide SU8 waveguides were fabricated to overlap 403180 mm photodiodes, with three different waveguide-photodiode overlap lengths. The attenuation due to leaky-mode coupling in the overlap area was then calculated from photoc...

This paper presents a balanced receiver structure suitable for wireless infrared data communications. The receiver provides a fixed photodiode bias voltage with the use of a regulated cascode input stage. Together with an active feedback loop used to eliminate dc photocurrents, the receiver implements ac coupling without the need for matching capacitors. Differential sensing of the photodiode c...

This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256x256 APS chip fabricated via HP in a standard 0.5μm CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the “ideal” dark current determined by the photodiode junction, introduced here ...

An ultrafast GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit.in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode can measure laser pulse durations without using expensive sampling oscilloscopes. Key advantages are that this circuit works over a broad wavelength range and at low peak ...