نتایج جستجو برای: pd soi

تعداد نتایج: 62400  

2015
Michel Oelschlägel Claudia Heiland Michael Schlömann Dirk Tischler

The styrene oxide isomerase (SOI) represents a membrane-bound enzyme of the microbial styrene degradation pathway and has been discussed as promising biocatalyst. It catalyzes the isomerization of styrene oxide to phenylacetaldehyde. In this study a styC gene, which encodes the SOI of Rhodococcus opacus 1CP, was optimized for optimal expression in Escherichia coli BL21(DE3) pLysS. The expressio...

Journal: :journal of computer and robotics 0
mojtaba kazemi faculty of electrical and computer engineering, qazvin branch, islamic azad university, qazvin, iran jalal najafi faculty of electrical and computer engineering, qazvin branch, islamic azad university, qazvin, iran mohamad bagher menhaj department of electrical engineering, amirkabir university, tehran, iran

the ball and beam system is one of the most popular laboratory setups for control education. in this paper, we design a fuzzy pd cascade controller for a ball and beam system using asexual reproduction optimization (aro) technique. the ball & beam system consists of a servo motor, a grooved beam, and a rolling ball. this system utilizes a servo motor to control ball’s position on the beam. chan...

1999
Sung Bae Park Young Wug Kim Young Gun Ko Kwang Il Kim Il Kwon Kim Hee-Sung Kang Jin Oh Yu Kwang Pyuk Suh

A 0.25m, four-layer-metal, 1.5-V, 600-MHz, fully depleted (FD) silicon-on-insulator (SOI) CMOS 64-bit ALPHA1 microprocessor integrating 9.66 million transistors on a 209-mm silicon die has been developed leveraging the existing bulk design. FD-SOI technology is used because it has better immunity for dynamic leakage current than partially depleted SOI in highspeed dynamic circuits without body ...

2008
Conal E. Murray S. M. Polvino I. C. Noyan B. Lai Z. Cai

Synchrotron-based X-ray microbeam measurements were performed on silicon-on-insulator (SOI) features strained by adjacent shallow-trench-isolation (STI). Strain engineering in microelectronic technology represents an important aspect of the enhancement in complementary metal-oxide semiconductor (CMOS) device performance. Because of the complexity of the composite geometry associated with microe...

1998
J. Cao D. Pavlidis Y. Park J. Singh A. Eisenbach

The use of compliant silicon-on-insulator ~SOI! substrates instead of Si substrates is shown to improve the quality of epitaxial GaN layers by releasing the strain and absorbing the generated threading dislocations in the thin Si overlay of the SOI substrate. GaN layers have been grown on SOI substrates by low-pressure metalorganic chemical vapor deposition and various growth conditions and com...

1999
GREGORY J. McCABE MICHAEL D. DETTINGER

Changing patterns of correlations between the historical average June–November Southern Oscillation Index (SOI) and October–March precipitation totals for 84 climate divisions in the western US indicate a large amount of variability in SOI/precipitation relations on decadal time scales. Correlations of western US precipitation with SOI and other indices of tropical El Niño–Southern Oscillation ...

Journal: :The Behavioral and brain sciences 2005
David P Schmitt

The Sociosexual Orientation Inventory (SOI; Simpson & Gangestad 1991) is a self-report measure of individual differences in human mating strategies. Low SOI scores signify that a person is sociosexually restricted, or follows a more monogamous mating strategy. High SOI scores indicate that an individual is unrestricted, or has a more promiscuous mating strategy. As part of the International Sex...

2016
Vita Pi-Ho Hu

Abstract The impacts of negative and positive bias temperature instabilities (NBTI and PBTI) on the stability of ultra-thin-body (UTB) GeOI 6T SRAM cell and performance of sense amplifier compared with the SOI counterparts are analyzed and discussed in this report. Worst case stress scenarios for read and write operations are analyzed. For UTB GeOI SRAMs, PBTI dominates the degradations in read...

2002
J. M. Park T. Grasser H. Kosina S. Selberherr

The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. ...

2007
Y. Ikegami Y. Arai K. Hara M. Hazumi H. Ikeda H. Ishino T. Kohriki H. Miyake A. Mochizuki S. Terada T. Tsuboyama Y. Unno

The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fab...

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