a procedure is presented that synthesizes fractional crystallization separation processes to obtain pure solids from multi-component solutions. the method includes a procedure to generate a network flow model to identify alternative process designs for fractional crystallization. the main advantage of this systematic procedure with respect to other reported procedures is using non-equilibrium s...

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in ...

(GaN)1-x(ZnO)x solid-solution nanostructures with superior crystallinity, large surface areas and visible light absorption have been regarded as promising photocatalysts for overall water splitting to produce H2. In this work, we report the preparation of (GaN)1-x(ZnO)x solid-solution nanorods with a high ZnO solubility up to 95% via a two-step synthetic route, which starts from a sol-gel react...

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1-xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed. INTRODUCTION From the late 60’s to the early 70’s Maruska a...

This work focuses on the optical study of GaN nanowires and AlN microcavities containingGaN quantum dots. The 1-meV linewidth of the neutral donor-bound exciton line in thephotoluminescence spectrum of MBE-grown GaN nanowires evidences that the strain ishomogeneous in the material. These nanowires do not exhibit any excitonic confinement, butthe efficient strain relaxation allow...

We prove one direction of a recently posed conjecture by Gan-Gross-Prasad, which predicts the branching laws that govern restriction from p-adic $GL_n$ to $GL_{n-1}$ irreducible smooth representations within Arthur-type class. We extend this prediction full class unitarizable representations, exhibiting combinatorial relation must be satisfied for any pair in appears as quotient other. settle...

We describe epitaxial methods for two different semipolar GaN orientations on patterned sapphire substrates: With (101̄2) (r-plane) sapphire substrates we achieve planar (112̄2) GaN layers with smooth surfaces on a large scale. In the case of (112̄3) (n-plane) patterned wafers the growth of (101̄1) GaN is possible. We optimized the growth conditions for (112̄2) GaN (especially the growth temperature...

In this paper, semi-analytical method for asymmetrical eccentrically stiffened FGM cylindrical shells under external pressure and surrounded by a linear and non-linear elastic foundation is presented. The proposed linear model is based on two parameter elastic foundation Winkler and Pasternak. According to the von Karman nonlinear equations and the classical plate theory of shells, strain-displ...