Faculdade de Ciências e Tecnologia Departamento de Engenharia Eletrotécnica e de Computadores Mestrado Integrado em Engenharia Eletrotécnica e de Computadores por David Jorge Tiago Amoêdo In this thesis we present a balun low noise amplifier (LNA) in which the gain is boosted using a double feedback structure. The circuit is based in a Balun LNA with noise and distortion cancellation. The LNA i...

Delivering high gain, low noise and good linearity simultaneously with low power consumption in fully-integrated CMOS low noise amplifiers (LNAs) has posed significant difficulty. This paper presents a 19 dB gain, 2.4 dB noise figure, common-gate common-source (CG-CS) single-ended LNA operating at 5.4 GHz. Using gm-boosting, current-reuse and transformer feedback techniques, the LNA mitigates s...

We consider pulse formation dynamics in an actively mode-locked laser. We show that an amplitudemodulated laser is subject to large transient growth and we demonstrate that at threshold the transient growth is precisely the Petermann excess noise factor for a laser governed by a nonnormal operator. We also demonstrate an exact reduction from the governing PDEs to a low-dimensional system of ODE...

A VHF (30MHz-300MHz) band digitally programmable low noise amplifier (LNA) has been implemented with a 0.25um standard CMOS process for VHF CMMB mobile TV tuners. Utilizing a T-match input network, input matching of more than a decade bandwidth is achieved across all gain settings. Adopting the multiple gated technique, gain flatness enhancement and capacitor reuse etc., the proposed LNA demons...

A 2.4GHz low noise amplifier has been designed in a standard CMOS 0.35 urn process. The transistor model is Bsim3 for 0.35um process. The amplifier provides a forward gain of 33dB with a noise figure only 0.92dB while drawing 17mw from a 1.5 V supply. Design simulation results are presented in this paper.

Gate and drain current noise investigations are performed on nMOS transistors with HfO2 gate oxides. The drain noise magnitude allows extraction of the slow oxide trap density Nt(EF) ranging from 3 to 7 10 eV cm. These values are about 50 times higher than for SiO2 dielectrics. The 1/f gate current noise component is a quadratic function of the gate leakage current. The gate noise parameter KGC...

The lifetimes of coasting beams in LEP are computed from the difference of the bunch currents measured during a time interval of a few seconds. The quality of these measurements is presently limited by the noise figure of the bunch to bunch aquistion system. This paper decribes comparative studies on the aquistion system in order to improve the noise figure by one order of magnitude. For this p...

A noise analysis of current-commutating CMOS mixers, such as the widely used CMOS Gilbert cell, is presented. The contribution of all internal and external noise sources to the output noise is calculated. As a result, the noise figure can be rapidly estimated by computing only a few parameters or by reading them from provided normalized graphs. Simple explicit formulas for the noise introduced ...

We review state-of-the-art intensity-modulation direct-detection (IMDD) analog optical links, focusing on advances since 1990. We contrast direct and external modulation with respect to gain, noise figure (NF), and dynamic-range (DR) performance.

-The high quality signal demands at user end and introduction of impairments due to increased network capacity and data rates made it essential to monitor quality of signal at different points while it travels from source to destination. One of the important parameter to quantize the signal quality is OSNR. In the proposed work effect of Power, Bit Rate, Noise Figure and Signal Gain on OSNR of ...