Silicon nitride based ceramics are promising candidates for biomedical applications due to their chemical and dimensional stability associated to suitable mechanical strength and relatively high fracture toughness. However, the bioinert characteristics of these ceramics limit their application to situations where the formation of chemical bonds between the material and the tissue are not essent...

The six-electron oxidation of two nitrides to N2 is a key step of ammonia synthesis and decomposition reactions on surfaces. In molecular complexes, nitride coupling has been observed with terminal nitrides, but not with bridging nitride complexes that more closely resemble catalytically important surface species. Further, nitride coupling has not been reported in systems where the nitrides are...

Piezoelectricity is a unique property of materials that permits the conversion of mechanical stimuli into electrical and vice versa. On the basis of crystal symmetry considerations, pristine carbon nitride (C3N4) in its various forms is non-piezoelectric. Here we find clear evidence via piezoresponse force microscopy and quantum mechanical calculations that both atomically thin and layered grap...

The microstructure and phase composition of the high-content Al2O3-Y2O3-doped spark plasma-sintered silicon nitride were investigated. Fully dense silicon nitride ceramics with a typical α-Si3N4 equiaxed structure with average grain size from 200 to 530 nm, high elastic modulus of 288 GPa, and high hardness of 2038 HV were spark plasma sintered (SPSed) at 1550 °C. Silicon nitride with elongated...

Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid in...

An equilibrium Y-Si-0-N melt was infiltrated to eliminate the open porosity of reaction-bonded silicon nitride at 16001800°C. This oxynitride melt contained two equilibrium phases, a P-Si,N, solid phase and a liquid phase at high temperatures. Before infiltration, porous reaction-bonded silicon nitride compacts were heat-treated to completely transform to the P-Si3N, phase. After infiltration, ...

The title compound, [Mn(C48H36N4)(N)], is a manganese(V) complex with the transition metal in a square-pyramidal coordination geometry and a nitride as the axial ligand. The complex resides on a crystallographic inversion center and only one half of it is symmetry independent. The Mn(V) atom and the nitride N atom are equally disordered across the inversion center. The Mn N distance is 1.516 (4...

Titanium nitride is considered a promising alternative plasmonic material and is known to exhibit localized surface plasmon resonances within the near-infrared biological transparency window. Here, local heating efficiencies of disk-shaped nanoparticles made of titanium nitride and gold are compared in the visible and near-infrared regions numerically and experimentally with samples fabricated ...

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Scandium nitride (ScN) is a semiconducting transition metal nitride for which there are not identified dopants. We present local density functional calculations, in supercell approach, for ScN doped with O and C in N-sites and Ca and Ti in Sc-sites. Small additions of these atoms have the effect of shifting the Fermi level within the electronic band structure. O and Ti bring occupied states in ...