نتایج جستجو برای: nitride aluminum

تعداد نتایج: 64159  

2014
A. López-Delgado O. Rodríguez I. Padilla R. Galindo S. López-Andrés

In Spain, the secondary aluminum industry is a mature activity which produces 35% of the total aluminum production. This industry generates slag (black dross) with a valuable content of aluminum which is recovered by dry milling processes in the aluminum tertiary industry. The powdered fine solid is trapped in the sleeve filter suction system of the aluminum slag milling process. This solid is ...

2009
Muhammad Maqbool Tariq Ali

Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100-200 watts RF power and 5-8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm a...

Journal: :Micromachines 2023

In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment AlGaN. The atomic pretreatment was performed specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved Al2O3/AlGaN interface Dit of ~2 × 1012 cm−2 eV−1, and thus effectively reduced dynamic Ron degradation. devices showed good electrical p...

2017
Tim Kolbe Arne Knauer Jens Rass Hyun Kyong Cho Sylvia Hagedorn Sven Einfeldt Michael Kneissl Markus Weyers

The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were simulated and compared to electroluminescence measurements. The light output power depends strongly on the temporal biscyclopentadienylmagnesium (Cp...

2016
Dong Xu Kanin Chu Jose Diaz Wenhua Zhu Richard Roy Peide D. Ye

We report a successful application of atomic layer deposition (ALD) aluminum oxide as a passivation layer to gallium nitride high electron-mobility transistors (HEMTs). This new passivation process results in 8%–10% higher dc maximum drain current and maximum extrinsic transconductance, about one order of magnitude lower drain current in the subthreshold region, 10%–20% higher pulsed-I V drain ...

2016
J. I. Lee E. S. Park Eun Soo Park

Our study proposes in situ synthesis of cold-rollable aluminum nitride (AlN) reinforced aluminum matrix composites with attractive thermal properties via arc plasma-induced accelerated volume nitridation (APAVN). Within three minutes of repeated APAVN using commercial nitrogen gas, volume fraction of AlN increased up to 40 vol%, which is the highest value ever reported by in situ nitridation of...

Journal: :Journal of the Ceramic Association, Japan 1986

Journal: :Journal of the Japan Welding Society 1964

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