An approximate formula for the frequency of oscillations is theoretically derived for skeleton models for electrochemical systems exhibiting negative differential resistance (NDR) under conditions close to supercritical Hopf bifurcation points. The theoretically predicted omega infinity (k/R)1/2 relationship (where R is the series resistance of the cell and k is the rate constant of the charge ...

Abstract Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of Ge/ZrO /TaN capacitors is proposed to be originated from oxygen vacancy dipoles. NC effect amorphous HfO 2 and films devices proved by sudde...

A newly structured triple-well resonant tunneling diode (RTD) is proposed as a triple-valued logic device. The superiority of this new RTD for triple-valued logic application i s demonstrated with numerical simulation based on the transfer matrix method. This new RTD exhibits significant double-negative differential resistance, and the two current peak voltages are independently controlled with...

The GaN material parameters relevant to the negative di€erential resistance (NDR) devices are discussed, and their physical models based on the theoretical predictions and experimental device characteristics are introduced. Gunn diode design criteria were applied to design the GaN NDR diodes. A higher electrical strength of the GaN allowed operation with higher doping ( 10 cmÿ3) and at a higher...

Time series measurements [G. Shaw et al., Phys. Rev. B 85, 174517 (2012); B. Bag Sci. Rep. 7, 5531 (2017)] in $2H\text{\ensuremath{-}}{\mathrm{NbS}}_{2}$ crystal had unraveled a drive-induced transition wherein the critical current $({I}_{c})$ changes from low to high ${I}_{c}$ jammed vortex state, via negative differential resistance (NDR) transition. Here, using multiple current-voltage $(I\t...

Abstract To extend the Moore’s law in 5 nm node, a large number of two dimensional (2D) materials and devices have been researched, among which ‘cold’ metals 2H MS 2 (M = Nb, Ta) with unique band structures are expected to achieve sub-60 mVdec ?1 subthreshold swing (SS). We explored electronic properties ballistic quantum transport performance corresponding MOSFETs idealized structures. The stu...

This paper describes the incorporation of an accurate physics-based model of the resonant tunneling diode (RTD) into Berkeley SPICE version 3F5 and addresses the related direct current (dc) and transient convergence problems caused by the negative differential resistance (NDR) and the exponential nature of the device characteristics. To circumvent the dc convergence problems, a new continuation...

Design and measurements of molecular wires, switches, and memories offer an increased device capability with reduced elements. We report: Measurements on through-bond electronic transport properties of nanoscale metal-1,4-phenylene diisocyanide-metal junctions are reported, where nonohmic thermionic emission is the dominant process, with isocyanide-Pd showing the lowest thermionic barrier of 0....