We investigate the physics behind the ‘atomistic’ dopant model widely used in drift-diffusion (DD) simulators for the study of statistical threshold voltage variations in ultra-small MOSFETs. It is found that the conventional dopant model, when extended to the extreme atomistic regime, becomes physically inconsistent with the concepts of electric potential presumed in DD device simulations. The...

Evaluation techniques for semiconductor devices are keys for device development with low cost and short period. Especially, dopant and depletion layer distribution in device is critical for electrical property of the device and is needed to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHO-SNDM) is one of the promising techniques for semiconductor device evaluation. We devel...

Autonomous Underwater Vehicles (AUVs) are used by the scientific community for various applications, from collecting well-distributed high-quality data to mapping seafloor or exploring unknown areas. Nonpredictable environmental conditions and sensor acquisitions make design of AUV surveys challenging even expert operators. Multiple attempts required, collected quality is not guaranteed: The pa...

Point defects in semiconductors play a decisive role for the functionality of semiconductors. A detailed, quantitative understanding of diffusion and defect reactions of dopants is required for advanced modelling of modern nanometer size electronic devices. With isotope heterostructures which consist of epitaxial layers of isotopically pure and deliberately mixed stable isotopes, we have studie...

Photoluminescence spectroscopy at 79K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the ...

Point defect kinetics are important for understanding and modeling dopant diffusion in silicon. This article describes point defect models and compares them with experimental results for intrinsically doped material. Transient dopant diffusion due to low dose silicon implant damage can be modeled with the same parameters as oxidation enhanced diffusion, and therefore provides an additional tech...

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n⁺ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for th...

Field ionization measurements of high-n CH(3)I and C(2)H(5)I Rydberg states doped into krypton are presented as a function of krypton number density along the critical isotherm. These data exhibit a decrease in the krypton-induced shift of the dopant ionization energy near the critical point. This change in shift is modeled to within +/-0.2% of experiment using a theory that accounts for the po...

Practical quantum technologies built from wide band gap semiconductors, in particular diamond and silicon carbide, have become realistic thanks to careful defect engineering of these materials. Color centers, created by point defect dopant atoms, such as silicon and nitrogen, are the basis for nanomagnetomers that can sense and measure the state of a single nuclear spin and provide a platform f...

We present a new method for computing the electrical impedance of solid oxide electrolyte from kinetic Monte Carlo simulations of oxygen vacancy diffusion. The impedance values at all frequencies are obtained from a single equilibrium simulation based on the fluctuation–dissipation theorem, leading to a significant gain of efficiency over existing methods.This allows us to systematically examin...