The device design of future nanoscale MOSFETs is reviewed. Major challenges in the design of the nanometer MOSFETs and the possible solutions are discussed. In this paper, special emphasis is placed on the combination of new transistor structures that suppress the short channel effect and on back-gate voltage control that suppresses the characteristics variations. Two new device architectures, ...

The recent development of the superlattice nanowire pattern transfer technique allows for the fabrication of arrays of nanowires at a diameter, pitch, aspect ratio, and regularity beyond competing approaches. Here, we report the fabrication of conducting Si nanowire arrays with wire widths and pitches of 10–20 and 40–50 nm, respectively, and resistivity values comparable to the bulk through the...

A defect-tolerant design is presented for a demultiplexer circuit that is based on threshold logic. The design uses coding both to handle (i.e., tolerate) defects in the circuit and to improve the voltage margin in its gates. The following model is assumed for the defects: configured junctions can become either stuck open or stuck closed, and non-configured junctions can become shorted. Two rea...

The metal oxide semiconductor field effect transistor is the building block of VLSI(Very Large Scale Industry).Minimum featrure size of the ICs has shurnk consideably over the time of several decades. This results in a chip with the same functionality in a smaller area, or chips with more functionality in the same area.As a consequence,the number of transistor has increased over time. When gate...

Article history: Received 23 September 2015 Received in revised form 1 March 2016 Accepted 1 March 2016 Available online 2 May 2016 Spin transfer torque (STT) switching realized using a magnetic tunnel junction (MTJ) device has shown great potential for low power and non-volatile storage. A prime application of MTJs is in building non-volatile look up tables (LUT) used in reconfigurable logic. ...

Abstract Since the discovery of graphene, two-dimensional (2D) materials have been widely applied to field-effect transistors due their great potential in optoelectronics, photodetectors, intelligent sensors, and neuromorphic devices. By integrating a 2D transistor with triboelectric nanogenerator (TENG) into tribotronic transistor, induced can readily regulate charge carrier transport characte...

The electronics industry is encountering thermal challenges and opportunities with lengthscales comparable to or much less than one micrometer. Examples include nanoscale phonon hotspots in transistors and the increasing temperature rise in onchip interconnects. Millimeter-scale hotspots on microprocessors, resulting from varying rates of power consumption, are being addressed using two-phase m...