A novel resistive random access memory device is designed with SrTiO3/ La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series...

The energy-loss near-edge structure (ELNES) at the oxygen K edge in two AB2O4 spinels (A=Mg, B=Al,Cr) is reported. In MgAl2O4 the experimental data is successfully modelled within the LDA framework. In the case of MgCr2O4 spin-polarisation, in the form of antiferromagnetic ordering on the Cr sub-lattice, must be included despite the fact that the measurements were performed at approximately 30 ...

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A series of Tb3+ doped cubic MgAl2O4 green phosphors were synthesized via hydrothermal method followed by a post-annealing process. The variation regularity phase structure, morphology, particle size and concentration quenching mechanism investigated. results showed that the crystal structure matrix materials was not affected when ions introduced. In addition, micrometer-sized rods excellent di...