Intrinsic charge transport in molecularly thin organic semiconducting crystals is critically sensitive to the quality of interfaces required perform electrical measurements. Most prominent are dielectric–semiconductor and semiconductor–metal interface. While impacts from latter on can be extracted by four-terminal measurements, impact dielectric interface only minimized, typically utilizing ine...

High quality epitaxial indium zinc oxide (heavily indium oxide doped) (epi-n-IZO) thin films were optimized by laser-molecular beam epitaxy (L-MBE) i.e., pulsed laser deposition (PLD) technique for fabricating novel isoand hetero-semiconductor–insulator–semiconductor (SIS) type solar cells using Johnson Matthey ‘‘specpure’’grade 90% In2O3 mixed 10% ZnO (as commercial indium tin oxide (ITO) comp...

In this review paper, an overview of the application n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen SBDs among other semiconductor devices such PiN or metal-oxide-semiconductor (MOS) structures, significant progress has been achieved in detection applications last decade. Here, we present recent advances at all key stages detectors, namely: fabricat...

Molybdenum and tungsten diselenide are among the most robust and efficient semiconductor materials for photoelectrochemistry, but they have seen limited use for integrated solar energy storage systems. Herein, we report that n-type WSe2 photoelectrodes can facilitate unassisted aqueous HI electrolysis to H2(g) and HI3(aq) when placed in contact with a platinum counter electrode and illuminated ...

Compared with the two-dimensional atomic crystal materials whose bulk phase is layered originally, related research of material crystals non-layered still very scarce. The monolayer CuSe studied in this paper belongs to latter, which a new honeycomb graphene analogue. Monolayer not suitable for application electronic devices because its metallic nature. In order find excellent performance devic...

We present here the development of a new solution-processable n-type dopant, N-DMBI. Our experimental results demonstrated that a well-known n-channel semiconductor, [6,6]-phenyl C(61) butyric acid methyl ester (PCBM), can be effectively doped with N-DMBI by solution processing; the film conductivity is significantly increased by n-type doping. We utilized this n-type doping for the first time ...

The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. even reduced dimension will enable novel properties further miniaturization beyond the capabilities its two-dimensional counterparts have revealed. natural doping results p-type electrical characteristics semicon...

We study the electromechanical response of Janus transition metal dichalcogenide (TMD) nanotubes from first principles. In particular, considering both armchair and zigzag variants twenty-seven select TMD nanotubes, we determine change in bandgap charge carriers' effective mass upon axial torsional deformations using density functional theory (DFT). observe that metallic remain unaffected, wher...